Abstract:The study focuses on analysing the high-level carrier lifetime ( ) in 4H silicon carbide (4H-SiC) PiN diodes under varying temperatures and proton implantation doses. The objective is to identify an empirical law applicable in technology computer-aided design (TCAD) modelling for SiC devices, describing the dependence of carrier lifetime on temperature to gain insights into how irradiation dose may influence the . We electrically characterize diodes of different diameters subjected to different proton irradiation doses and examine the variations in current-voltage (I-V) and ideality factor (n) curves under various irradiation conditions. The effects of proton irradiation on the epitaxial layer are analysed through capacitance-voltage (C-V) measurements. We correlate the observed effects on I-V, n, and C-V curves to the hypothesis of formation of acceptor-type defects related to carbon vacancies, specifically the Z defects generated during the irradiation process. The impact of irradiation on carrier lifetime is investigated by measuring using the open circuit voltage decay (OCVD) technique at different temperatures on diodes exposed to various H+ irradiation doses with constant ion energy. This investigation reveals the presence of a proportional relationship between 1/ and the dose of irradiated protons: the proportionality coefficient, referred to as the damage coefficient (K ), exhibits an Arrhenius-type dependence on temperature. OCVD-measured lifetime on the various diodes demonstrates a power-law dependence of lifetime on temperature. The exponent of this dependence varies with the irradiation dose, notably showing an increase in temperature dependence at the highest H+ ion dose. This suggests a threshold-like dependence on H+ irradiation dose in the -temperature relationship.

Irradiation and annealing of p-type silicon carbide

Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation

Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Role of Low-Temperature Annealing in Modifying Silicon Carbide by Beams of Charged Particles

Ionization-induced annealing of pre-existing defects in silicon carbide

β -rays induced displacement damage on epitaxial 4H-SiC revealed by exciton recombination

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Neutron Radiation induced Effects in 4H-SiC PiN Diodes

Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation

Electron Radiation Effects on the 4H-Sic PiN Diodes Characteristics: an Insight from Point Defects to Electrical Degradation

Demonstration of Irradiation-Resistant 4H-Sic Based Photoelectrochemical Water Splitting

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

Temperature Effects of Nuclear and Electronic Stopping Power on Si and C Radiation Damage in 3C-SiC

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature