Abstract:Traditional semiconductor detectors such as silicon and germanium are easily affected by ambient temperature and charge-particle ion's radiation. They can't work stably in harsh environments such as high temperature and strong radiation for a long time. In this paper, 4H-silicon carbide detectors based on a Schottky barrier diode (SBD) were fabricated and the combined influences of high temperatures and heavy ion irradiation on 4H–SiC detectors have been investigated. With no radiation, the 4H–SiC detectors have excellent I–V characteristics performance during a temperature range of 30–200 °C. Even at an ambient temperature of 200 °C, the leakage current of the 4H–SiC detector was only 107 nA at the full depletion voltage. Then 280 KeV C 4+ heavy ions were used to irradiate the 4H-silicon carbide detectors, and the performances of the irradiated detectors were studied for different radiation doses from 1×10 13 to 1×10 16 ions/cm 2 in a certain higher ambient temperature environment. For the fully depleted 4H-silicon carbide detectors in an ambient temperature of 140 °C, both the I–V characteristics and the energy resolution have shown a certain radiation damage at the radiation fluence of 1×10 15 ions/cm 2 , while a significant deterioration was observed when the radiation fluence is up to 1×10 16 ions/cm 2 . It means that the 4H–SiC detectors can withstand an irradiation dose of 1×10 15 ions/cm 2 at 140 °C. The time-dependent I–V curves were also investigated for the irradiated detectors for a standing time up to 192 hours, and it's found that the irradiated detectors had minor changes in the leakage currents during a long time standing. A PN junction model with current and voltage equations was used to explain the phenomenon that the reverse leakage current increases with the increase of temperature. The surface recombination model was also used to explain the deterioration of I–V characteristics and energy resolution after irradiation.

Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature

Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature

Irradiation and annealing of p-type silicon carbide

Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

Role of Low-Temperature Annealing in Modifying Silicon Carbide by Beams of Charged Particles

β -rays induced displacement damage on epitaxial 4H-SiC revealed by exciton recombination

Temperature Effects of Nuclear and Electronic Stopping Power on Si and C Radiation Damage in 3C-SiC

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Nondestructive Spectroscopic Investigation of N-Type 4H-SiC Defects Irradiated With Low Fluence 16.5 MeV/u Ta Ions

Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations

Effects of proton radiation on field limiting ring edge terminations in 4H–SiC junction barrier Schottky diodes

Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

High-temperature threshold of damage of SiC by swift heavy ions

TCAD modeling of radiation-induced defects in 4H-SiC diodes

Study of irradiation damage in silicon at different scales

Influence of heavy ion irradiation and high temperature on the performance of 4H–SiC Schottky barrier α particle detector