Abstract:The study focuses on analysing the high-level carrier lifetime ( ) in 4H silicon carbide (4H-SiC) PiN diodes under varying temperatures and proton implantation doses. The objective is to identify an empirical law applicable in technology computer-aided design (TCAD) modelling for SiC devices, describing the dependence of carrier lifetime on temperature to gain insights into how irradiation dose may influence the . We electrically characterize diodes of different diameters subjected to different proton irradiation doses and examine the variations in current-voltage (I-V) and ideality factor (n) curves under various irradiation conditions. The effects of proton irradiation on the epitaxial layer are analysed through capacitance-voltage (C-V) measurements. We correlate the observed effects on I-V, n, and C-V curves to the hypothesis of formation of acceptor-type defects related to carbon vacancies, specifically the Z defects generated during the irradiation process. The impact of irradiation on carrier lifetime is investigated by measuring using the open circuit voltage decay (OCVD) technique at different temperatures on diodes exposed to various H+ irradiation doses with constant ion energy. This investigation reveals the presence of a proportional relationship between 1/ and the dose of irradiated protons: the proportionality coefficient, referred to as the damage coefficient (K ), exhibits an Arrhenius-type dependence on temperature. OCVD-measured lifetime on the various diodes demonstrates a power-law dependence of lifetime on temperature. The exponent of this dependence varies with the irradiation dose, notably showing an increase in temperature dependence at the highest H+ ion dose. This suggests a threshold-like dependence on H+ irradiation dose in the -temperature relationship.

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

Role of Low-Temperature Annealing in Modifying Silicon Carbide by Beams of Charged Particles

Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law

Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations

Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes

Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range

Gamma Irradiation and Annealing Effects on 4H-Sic Schottky Barrier Diode

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

Irradiation and annealing of p-type silicon carbide

Neutron Radiation induced Effects in 4H-SiC PiN Diodes

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms

Investigation of 4H-Sic Schottky Barrier Diodes Irradiated with 6 MeV Au Ions at Low Temperature

Effect of Primary Knocked-on Atoms on Conductivity Compensation in N-type 4H-Sic Irradiated by 1 MeV Electrons, 25 MeV C Ions and 40 MeV Si Ions

Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon

A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes

Effects Of the γ- radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode

Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature