Abstract:Traditional semiconductor detectors such as silicon and germanium are easily affected by ambient temperature and charge-particle ion's radiation. They can't work stably in harsh environments such as high temperature and strong radiation for a long time. In this paper, 4H-silicon carbide detectors based on a Schottky barrier diode (SBD) were fabricated and the combined influences of high temperatures and heavy ion irradiation on 4H–SiC detectors have been investigated. With no radiation, the 4H–SiC detectors have excellent I–V characteristics performance during a temperature range of 30–200 °C. Even at an ambient temperature of 200 °C, the leakage current of the 4H–SiC detector was only 107 nA at the full depletion voltage. Then 280 KeV C 4+ heavy ions were used to irradiate the 4H-silicon carbide detectors, and the performances of the irradiated detectors were studied for different radiation doses from 1×10 13 to 1×10 16 ions/cm 2 in a certain higher ambient temperature environment. For the fully depleted 4H-silicon carbide detectors in an ambient temperature of 140 °C, both the I–V characteristics and the energy resolution have shown a certain radiation damage at the radiation fluence of 1×10 15 ions/cm 2 , while a significant deterioration was observed when the radiation fluence is up to 1×10 16 ions/cm 2 . It means that the 4H–SiC detectors can withstand an irradiation dose of 1×10 15 ions/cm 2 at 140 °C. The time-dependent I–V curves were also investigated for the irradiated detectors for a standing time up to 192 hours, and it's found that the irradiated detectors had minor changes in the leakage currents during a long time standing. A PN junction model with current and voltage equations was used to explain the phenomenon that the reverse leakage current increases with the increase of temperature. The surface recombination model was also used to explain the deterioration of I–V characteristics and energy resolution after irradiation.

Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range

Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature

A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

Role of Low-Temperature Annealing in Modifying Silicon Carbide by Beams of Charged Particles

Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy

Influence of heavy ion irradiation and high temperature on the performance of 4H–SiC Schottky barrier α particle detector

Recovery at room temperature annealing on 4H–SiC SBDs by gamma irradiation

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

Comparison of the Effects of Continuous and Intermittent Electron Irradiation on Commercial 4H-Sic Schottky Barrier Diodes

Temperature Dependence of Total Ionizing Dose Effects of β-Ga2O3 Schottky Barrier Diodes

Development of 400 V-tolerant Single-Event Effect Hardened 4H-SiC Schottky Diode with linear energy transfer upto 83.5 MeV·cm 2 /mg

Local Diagnostics of Spin Defects in Irradiated SiC Schottky Diodes

The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy

Electron Radiation Effects on the 4H-Sic PiN Diodes Characteristics: an Insight from Point Defects to Electrical Degradation

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation

Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes

Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation