Abstract:The silicon carbide (SiC) Schottky diode (SBD) detector in a SiC hybrid photomultiplier tube (HPMT) generates signals by receiving photocathode electrons with an energy of 10 keV. So, the performance of the SiC SBD under electron irradiation with an energy of 10 keV has an important significance for the application of the SiC-HPMT. However, studies on 10 keV radiation effects on the SiC SBDs were rarely reported. In this paper, the performance degradation of the SiC SBDs irradiated by 10 keV electrons at different fluences was investigated. After the irradiation, the forward current of the SiC SBDs increased, and the turn-on voltage decreased with the irradiation fluences until 1.6 × 1016 cm−2. According to the capacitance–voltage (C-V) curves, the effective doping concentration increased slightly after the irradiation, and an obvious discrepancy of C-V curves occurred below 5 V. Moreover, as a radiation detector, the peak position of the α-particles' amplitude spectrum changed slightly, and the energy resolution was also slightly reduced after the irradiation due to the high collection charge efficiency (CCE) still being larger than 99.5%. In addition, the time response of the SiC SBD to the 50 ns pulsed X-ray was almost not affected by the irradiation. The results indicated that the performance degradation of the SiC SBD irradiated at the fluence of 1.5 × 1017 cm−2 would not result in a deterioration of the properties of the SiC-HPMT and showed an important significance for the supplement of the radiation resistance of the SiC SBD radiation detector.

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Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

Heavy Ion Radiation and Temperature Effects on SiC Schottky Barrier Diode

Electrical Characterization and Temperature Reliability of 4H-Sic Schottky Barrier Diodes after Electron Radiation

Gamma Irradiation and Annealing Effects on 4H-Sic Schottky Barrier Diode

Effects of ultraviolet illumination on 4H-SiC Schottky barrier diodes irradiated by swift heavy ions

The effect of the interfacial states by swift heavy ion induced atomic migration in 4H-SiC Schottky barrier diodes

Effect of Electron Irradiation and Defect Analysis of Β-Ga2o3 Schottky Barrier Diodes

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Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy

The Radiation Effects on 4h–sic Epilayers Using Different Electron Radiation Methods

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations

Comparison of Gamma Irradiation Effects on Short Circuit Characteristics of SiC MOSFET Power Devices Between Planar and Trench Structures

Recrystallization Effects of Swift Heavy 209bi Ions Irradiation on Electrical Degradation in 4H-Sic Schottky Barrier Diode

Effects of 300-Mev Proton Irradiation on Electrical Properties of $\Beta$-Ga$_{\text{2}}$otexpreserve2 Schottky Barrier Diodes

Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures

Study of Leakage Current Degradation Based on Stacking Faults Expansion in Irradiated SiC Junction Barrier Schottky Diodes

Effects of 10 keV Electron Irradiation on the Performance Degradation of SiC Schottky Diode Radiation Detectors