Abstract:High-spin defects (color centers) in wide-gap semiconductors are considered as a basis for the implementation of quantum technologies due to the unique combination of their spin, optical, charge, and coherent properties. A silicon carbide (SiC) crystal can act as a matrix for a wide variety of optically active vacancy-type defects, which manifest themselves as single-photon sources or spin qubits. Among the defects, the nitrogen-vacancy centers (NV) are of particular importance. This paper is devoted to the application of the photoinduced electron paramagnetic resonance (EPR) and electron–nuclear double resonance (ENDOR) techniques at a high-frequency range (94 GHz) to obtain unique information about the nature and properties of NV defects in SiC crystal of the hexagonal 4H and 6H polytypes. Selective excitation by microwave and radio frequency pulses makes it possible to determine the microscopic structure of the color center, the zero-field splitting constant (D = 1.2–1.3 GHz), the phase coherence time (T2), and the values of hyperfine (≈1.1 MHz) and quadrupole (Cq ≈ 2.45 MHz) interactions and to define the isotropic (a = −1.2 MHz) and anisotropic (b = 10–20 kHz) contributions of the electron–nuclear interaction. The obtained data are essential for the implementation of the NV defects in SiC as quantum registers, enabling the optical initialization of the electron spin to establish spin–photon interfaces. Moreover, the combination of optical, microwave, and radio frequency resonant effects on spin centers within a SiC crystal shows the potential for employing pulse EPR and ENDOR sequences to implement protocols for quantum computing algorithms and gates.

Local Diagnostics of Spin Defects in Irradiated SiC Schottky Diodes

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Influence of Irradiation on Defect Spin Coherence in Silicon Carbide

The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy

A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations

Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature

Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range

Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy

Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide

Structural and Luminescent Properties of Electron-Irradiated Silicon

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

TCAD modeling of radiation-induced defects in 4H-SiC diodes

Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

Electrical characteristics and deep-level transient spectroscopy of a fast-neutron-irradiated 4H–SiC Schottky barrier diode

Fully Optical Scanning Spectroscopy of the Anticrossing of Electron and Nuclear Spin Levels in a 4H-SiC Crystal

Role of Low-Temperature Annealing in Modifying Silicon Carbide by Beams of Charged Particles

Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis)