Abstract:The possibility of using axial spin color centers with $S=3/2$, oriented along the hexagonal $c$ axis in a silicon carbide (SiC) wafer, has been demonstrated for all-optical measurement of projection of the external magnetic field coinciding with the $c$ axis of the crystal, and the polar and azimuthal angles of the external measured magnetic field at room and significantly higher temperatures. A distinctive feature of spin centers in SiC, in which optically induced spin alignment is carried out, is the presence of a unique system of spin levels in a magnetic field, caused by fine structure interaction and hyperfine interaction with the $^{29}$Si nuclei and there is a wide range of level anticrossings (LACs), leading to an exceptionally strong change in photoluminescence in the region of LAC and the dependence of the LAC spectrum on the orientation of the external measured magnetic field, which made it possible to develop the all-optical vector magnetometry method. Such measurements do not require microwave radiation, it is possible to use single spin center for the all-optical vector magnetometry. The proposed magnetometer is based on an external magnetic field cancellation scheme, which leads to a LAC spectrum observed in a zero external magnetic field, called its reference spectrum, by maintaining a local region of zero magnetic field at the site of optical excitation of spin centers. 4H-SiC plate is placed on the scanning stage of a confocal microscope inside the Helmholtz coils. Sensitivity to a constant magnetic field for $z$ component of the magnetic field ${B}_{z}$ is better than $0.1\mu$T$/\sqrt{\text{Hz}}$ in a volume of $1\times10^{-8}$mm$^{3}$ at room temperature. The sensitivity of determining the angles polar and azimuthal is determined by the sensitivity to determining the perpendicular component of the magnetic field, which is better than $5~\mu$T$/\sqrt{\text{Hz}}$.

Fully Optical Scanning Spectroscopy of the Anticrossing of Electron and Nuclear Spin Levels in a 4H-SiC Crystal

Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis)

Optical Spin Initialization of Nitrogen Vacancy Centers in a 28Si-Enriched 6H-SiC Crystal for Quantum Technologies

Identification of acoustically induced spin resonances of Si vacancy centers in 4H-SiC

Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN

All-optical scanning vector magnetometry based on fine and hyperfine interactions in spin-$\frac{3}{2}$ centers in silicon carbide

Qudit-Based Spectroscopy for Measurement and Control of Nuclear-Spin Qubits in Silicon Carbide

Measuring nuclear spin qubits by qudit-enhanced spectroscopy in Silicon Carbide

Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions

Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide

14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study

Spin-Orbit Coupling of Color Centers for Quantum Applications

Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide

Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC

Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide

Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC

Cavity-enhanced measurements of defect spins in silicon carbide

Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide