Abstract:High-spin defects (color centers) in wide-gap semiconductors are considered as a basis for the implementation of quantum technologies due to the unique combination of their spin, optical, charge, and coherent properties. A silicon carbide (SiC) crystal can act as a matrix for a wide variety of optically active vacancy-type defects, which manifest themselves as single-photon sources or spin qubits. Among the defects, the nitrogen-vacancy centers (NV) are of particular importance. This paper is devoted to the application of the photoinduced electron paramagnetic resonance (EPR) and electron–nuclear double resonance (ENDOR) techniques at a high-frequency range (94 GHz) to obtain unique information about the nature and properties of NV defects in SiC crystal of the hexagonal 4H and 6H polytypes. Selective excitation by microwave and radio frequency pulses makes it possible to determine the microscopic structure of the color center, the zero-field splitting constant (D = 1.2–1.3 GHz), the phase coherence time (T2), and the values of hyperfine (≈1.1 MHz) and quadrupole (Cq ≈ 2.45 MHz) interactions and to define the isotropic (a = −1.2 MHz) and anisotropic (b = 10–20 kHz) contributions of the electron–nuclear interaction. The obtained data are essential for the implementation of the NV defects in SiC as quantum registers, enabling the optical initialization of the electron spin to establish spin–photon interfaces. Moreover, the combination of optical, microwave, and radio frequency resonant effects on spin centers within a SiC crystal shows the potential for employing pulse EPR and ENDOR sequences to implement protocols for quantum computing algorithms and gates.

Spin-Orbit Coupling of Color Centers for Quantum Applications

Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide

Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

Optoelectronics of Color Centers in Diamond and Silicon Carbide: From Single‐Photon Luminescence to Electrically Controlled Spin Qubits

Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis)

Fabrication and quantum sensing of spin defects in silicon carbide

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Quantum Photonics Incorporating Color Centers in Silicon Carbide and Diamond

Silicon Carbide Photonic Crystal Cavities with Integrated Color Centers

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Strong Spin-Orbit Quenching via the Product Jahn-Teller Effect in Neutral Group IV Artificial Atom Qubits in Diamond

High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

Hyperfine Spectroscopy of Isotopically Engineered Group-IV Color Centers in Diamond

Silicon carbide color centers for quantum applications

Group III Quantum Defects in Diamond are Stable Spin-1 Color Centers

Optical superradiance of a pair of color centers in an integrated silicon-carbide-on-insulator microresonator

Spin-photon entanglement interfaces in silicon carbide defect centers

Coherent microwave, optical, and mechanical quantum control of spin qubits in diamond

Strongly Coupled Spins of Silicon-Vacancy Centers Inside a Nanodiamond with Sub-Megahertz Linewidth

Optical Spin Initialization of Nitrogen Vacancy Centers in a 28Si-Enriched 6H-SiC Crystal for Quantum Technologies