Abstract:High-spin defects (color centers) in wide-gap semiconductors are considered as a basis for the implementation of quantum technologies due to the unique combination of their spin, optical, charge, and coherent properties. A silicon carbide (SiC) crystal can act as a matrix for a wide variety of optically active vacancy-type defects, which manifest themselves as single-photon sources or spin qubits. Among the defects, the nitrogen-vacancy centers (NV) are of particular importance. This paper is devoted to the application of the photoinduced electron paramagnetic resonance (EPR) and electron–nuclear double resonance (ENDOR) techniques at a high-frequency range (94 GHz) to obtain unique information about the nature and properties of NV defects in SiC crystal of the hexagonal 4H and 6H polytypes. Selective excitation by microwave and radio frequency pulses makes it possible to determine the microscopic structure of the color center, the zero-field splitting constant (D = 1.2–1.3 GHz), the phase coherence time (T2), and the values of hyperfine (≈1.1 MHz) and quadrupole (Cq ≈ 2.45 MHz) interactions and to define the isotropic (a = −1.2 MHz) and anisotropic (b = 10–20 kHz) contributions of the electron–nuclear interaction. The obtained data are essential for the implementation of the NV defects in SiC as quantum registers, enabling the optical initialization of the electron spin to establish spin–photon interfaces. Moreover, the combination of optical, microwave, and radio frequency resonant effects on spin centers within a SiC crystal shows the potential for employing pulse EPR and ENDOR sequences to implement protocols for quantum computing algorithms and gates.

Spin-photon entanglement interfaces in silicon carbide defect centers

Experimental Generation of Spin-Photon Entanglement in Silicon Carbide

Silicon Carbide Based Quantum Networking

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

Quantum communication networks with defects in silicon carbide

Extended spin relaxation times of optically addressed telecom defects in silicon carbide

Quantum bit with telecom wave-length emission from a simple defect in Si

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Cavity-enhanced measurements of defect spins in silicon carbide

Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide

All-optical spin access via a cavity-broadened optical transition in on-chip hybrid quantum photonics

Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide

Optical charge state control of spin defects in 4H-SiC

Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis)

Optical single-shot readout of spin qubits in silicon

Electrical and optical control of single spins integrated in scalable semiconductor devices