Abstract:Color centers in silicon carbide (SiC) have demonstrated significant promise for quantum information processing. However, the undesirable ionization process that occurs during optical manipulation frequently causes fluctuations in the charge state and performance of these defects, thereby restricting the effectiveness of spin-photon interfaces. Recent predictions indicate that divacancy defects near stacking faults possess the capability to stabilize their neutral charge states, thereby providing robustness against photoionization effects. In this work, we present a comprehensive protocol for the scalable and targeted fabrication of single divacancy arrays in 4H-SiC using a high-resolution focused helium ion beam. Through photoluminescence emission (PLE) experiments, we demonstrate long-term emission stability with minimal linewidth shift ($\sim$ 50 MHz over 3 hours) for the single c-axis divacancies within stacking faults. By measuring the ionization rate for different polytypes of divacancies, we found that the divacancies within stacking faults are more robust against resonant excitation. Additionally, angle-resolved PLE spectra reveal their two resonant-transition lines with mutually orthogonal polarizations. Notably, the PLE linewidths are approximately 7 times narrower and the spin-coherent times are 6 times longer compared to divacancies generated via carbon-ion implantation. These findings highlight the immense potential of SiC divacancies for on-chip quantum photonics and the construction of efficient spin-to-photon interfaces, indicating a significant step forward in the development of quantum technologies.

Electrical and optical control of single spins integrated in scalable semiconductor devices

Optical charge state control of spin defects in 4H-SiC

Room-temperature coherent control of implanted defect spins in silicon carbide

High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

Parallel single-shot measurement and coherent control of solid-state spins below the diffraction limit

Optical Charge State Manipulation of Divacancy Spins in Silicon Carbide under Resonant Excitation

Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN

Resolving the positions of defects in superconducting quantum bits

Engineering the formation of spin-defects from first principles

Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature

Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation

Extended spin relaxation times of optically addressed telecom defects in silicon carbide

Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Deterministic Laser Writing of Spin Defects in Nanophotonic Cavities

All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide

On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

Spin-photon entanglement interfaces in silicon carbide defect centers

Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide

Electrical charge state identification and control for the silicon vacancy in 4H-SiC

Nanoelectromechanical control of spin-photon interfaces in a hybrid quantum system on chip