Abstract:Color centers in silicon carbide are emerging candidates for distributed spin-based quantum applications due to the scalability of host materials and the demonstration of integration into nanophotonic resonators. Recently, silicon vacancy centers in silicon carbide have been identified as a promising system with excellent spin and optical properties. Here, we fully study the spin-optical dynamics of the single silicon vacancy center at hexagonal lattice sites, namely V1, in 4H-polytype silicon carbide. By utilizing resonant and above-resonant sublifetime pulsed excitation, we determine spin-dependent excited-state lifetimes and intersystem-crossing rates. Our approach to inferring the intersystem-crossing rates is based on all-optical pulsed initialization and readout scheme, and is applicable to spin-active color centers with similar dynamics models. In addition, the optical transition dipole strength and the quantum efficiency of V1 defect are evaluated based on coherent optical Rabi measurement and local-field calibration employing electric field simulation. The measured rates well explain the results of spin-state polarization dynamics, and we further discuss the altered photoemission dynamics in resonant enhancement structures such as radiative lifetime shortening and Purcell enhancement. By providing a thorough description of the V1 center's spin-optical dynamics, our work provides deep understanding of the system, which guides implementations of scalable quantum applications based on silicon vacancy centers in silicon carbide. https://doi.org/10.1103/PhysRevApplied.17.054005 © 2022 American Physical Society

All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide

Room-temperature coherent control of implanted defect spins in silicon carbide

Deep-Learning-Enhanced Single-Spin Readout in Silicon Carbide at Room Temperature

Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN

Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast

Electrical readout of spins in the absence of spin blockade

Nanotesla Magnetometry with the Silicon Vacancy in Silicon Carbide

High-Fidelity Optical Readout of a Nuclear-Spin Qubit in Silicon Carbide

Coherent control of defect spins in silicon carbide above 550 K

Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide

Single-Shot Readout of a Nuclear Spin in Silicon Carbide

High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

Electrical Control of Coherent Spin Rotation of a Single-Spin Qubit

Electrical and optical control of single spins integrated in scalable semiconductor devices

Qudit-Based Spectroscopy for Measurement and Control of Nuclear-Spin Qubits in Silicon Carbide

Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide

Cavity-enhanced measurements of defect spins in silicon carbide

Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields

Optical charge state control of spin defects in 4H-SiC

Optical single-shot readout of spin qubits in silicon