Abstract:Silicon carbide (SiC) has become a key player in the realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in SiC has been achieved with Rabi and Ramsey oscillations. Finally, we show the successful generation and characterization of single nitrogen vacancy (NV) center in SiC employing ion implantation. Our results highligh the key role of NV centers in SiC as a potential candidate for quantum information processing.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c02342?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c02342</a>.Additional details on experimental methods, sample preparation, experimental results including D and E values comparison with resonant EPR and ODMR characterization, Spin density distribution of the axial NV center in 4H-SiC, experimental results (EPR) and DFT simulation results of electron spins and nuclear spins interaction, 2D confocal PL mapping of nitrogen implanted 4H-SiC samples, g2(0) value raw data verse background corrected data, the saturation behavior of the NV emitter, additional single NV emitter, g2 measurements under unsaturated and saturated powers, confocal mapping of focused nitrogen ion beam implanted sample and its PL spectra, ODMR contrast under nonresonant excitation with 980 nm laser at l0 K (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c02342/suppl_file/nl0c02342_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Nanotesla Magnetometry with the Silicon Vacancy in Silicon Carbide

All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide

On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

Vacancy-related color centers in two-dimensional silicon carbide monolayers

Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC

Quantum Sensing of Spin Fluctuations of Magnetic Insulator Films with Perpendicular Anisotropy

All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide

On-demand generation of shallow silicon vacancy in silicon carbide

Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide

Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide

Nanoscale Depth Control of Implanted Shallow Silicon Vacancies in Silicon Carbide

Electrometry by optical charge conversion of deep defects in 4H-SiC

Vacancy-related color centers in twodimensional silicon carbide monolayers

Enhancement of silicon vacancy fluorescence intensity in silicon carbide using a dielectric cavity

Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions

Sensitive AC and DC Magnetometry with Nitrogen-Vacancy Center Ensembles in Diamond

Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide

Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC

Cavity-enhanced measurements of defect spins in silicon carbide

A spin-refrigerated cavity quantum electrodynamic sensor