Abstract:Two-dimensional (2D) materials have emerged as promising platforms for quantum technologies and optoelectronics, with defects playing a crucial role in their properties. We present a comprehensive density functional theory study of silicon and carbon vacancies in monolayer silicon carbide (1L-SiC), a wide-bandgap 2D semiconductor with potential for room-temperature quantum applications. Using PBE, SCAN, r$^2$SCAN, and HSE06 functionals, we reveal distinct characteristics between Si and C vacancies. Formation energies and charge transition levels show strong functional dependence, with HSE06 consistently predicting higher values and deeper transition levels compared to PBE calculations. Electronic structure analysis demonstrates contrasting behavior: silicon vacancies create highly localized states with strong spin polarization, while carbon vacancies produce more dispersed states with weaker magnetic properties. Vacancy migration studies reveal significantly lower barriers for silicon vacancies compared to carbon vacancies, indicating higher mobility for Si vacancies at moderate temperatures. Optical properties, calculated using PBE-DFPT, show distinct charge-state dependent absorption in the far-infrared region, with positively charged states of both vacancy types demonstrating the strongest response. The complementary characteristics of Si and C vacancies - localized versus dispersed states, different magnetic properties, and distinct optical responses - suggest possibilities for defect engineering in quantum and optoelectronic applications. Our results highlight the critical importance of advanced functionals in accurately describing defect properties and provide a comprehensive framework for understanding vacancy behavior in 2D materials.

Vacancy-related color centers in twodimensional silicon carbide monolayers

Vacancy-related color centers in two-dimensional silicon carbide monolayers

Vacancy-Induced Quantum Properties in 2D Silicon Carbide: Atomistic insights from semi-local and hybrid DFT calculations

The positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC

Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC

Characterization and formation of NV centers in 3C, 4H and 6H SiC: an \emph{ab initio} study

Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC

Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide

Characterization of single shallow silicon-vacancy centers in 4H-SiC

Experimental Optical Properties of Single Nitrogen Vacancy Centers in Silicon Carbide at Room Temperature

Identification of different silicon vacancy centers in 6H-SiC

Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC

First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC

Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide

Nanotesla Magnetometry with the Silicon Vacancy in Silicon Carbide

Electronic and Magnetic Properties of Graphene, Silicene and Germanene with Varying Vacancy Concentration

On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide

Theory of the divacancy in 4H-SiC: Impact of Jahn-Teller effect on optical properties