Abstract:Silicon carbide (SiC), as a wide-band gap semiconductor, plays an important role in high temperature and high-power devices, and the spin defect has great application prospect in quantum technology. Divacancy in SiC (VCVSi, VV) has attracted more and more attention. There are a lot of experimental studies on color center preparation by ion implantation, but the mechanism of atomic scale defects in the experimental preparation process is not fully understood. EPI epitaxial 4H–SiC was implanted with 250 keV proton at room temperature under three fluence of 1E14 cm−2, 1E15 cm−2, 1E16 cm−2. Defects of implanted 4H–SiC samples were characterized by photoluminescence spectrum and electron paramagnetic resonance (EPR). The existence of the optimal implantation fluence for VSi and VCVSi (VV) color centers by hydrogen ion implantation was found. Molecular dynamics (MD) simulation by considering the ionization energy loss for swift ion implantation were used to study the defect distribution and transformation at atomic-scale during hydrogen ion implantation and post-annealing. The optimal implantation fluence was found and confirmed by comparing the atomic-scale implantation simulation with the experimental results. In the annealing simulation, the optimal annealing temperature for the color centers in 4H–SiC was verified, and its formation mechanism was analyzed by accurately calculating the defect transformation during the annealing process. Finally, in order to accurately control the depth of color center in 4H–SiC, dual ions implantation of carbon and proton has been studied to realize the optimal divacancy yield by SRIM and MD simulations. Molecular dynamics simulation results showed that low-fluence C pre-implantation is helpful to improve the color center yield for the dual ions implantation.

Theory of the divacancy in 4H-SiC: Impact of Jahn-Teller effect on optical properties

Robust Single Modified Divacancy Color Centers in 4H-Sic under Resonant Excitation

First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC

Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation

Excitation properties of the divacancy in 4H-SiC

Theory of optical spinpolarization of axial divacancy and nitrogen-vacancy defects in 4H-SiC

Dipolar spin relaxation of divacancy qubits in silicon carbide

Vacancy-related color centers in two-dimensional silicon carbide monolayers

Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC

Optical Charge State Manipulation of Divacancy Spins in Silicon Carbide under Resonant Excitation

Vacancy-related color centers in twodimensional silicon carbide monolayers

Charge state and entropic effects affecting the formation and dynamics of divacancies in 3C-SiC

Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC

Vacancy-Induced Quantum Properties in 2D Silicon Carbide: Atomistic insights from semi-local and hybrid DFT calculations

First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC

Experimental Determination of the Dipole Orientation of Single Color Centers in Silicon Carbide

Divacancy and silicon vacancy color centers in 4H-SiC fabricated by hydrogen and dual ions implantation and annealing

Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide

Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC

Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics