Abstract:Silicon carbide (SiC) has become a key player in the realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in SiC has been achieved with Rabi and Ramsey oscillations. Finally, we show the successful generation and characterization of single nitrogen vacancy (NV) center in SiC employing ion implantation. Our results highligh the key role of NV centers in SiC as a potential candidate for quantum information processing.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c02342?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c02342</a>.Additional details on experimental methods, sample preparation, experimental results including D and E values comparison with resonant EPR and ODMR characterization, Spin density distribution of the axial NV center in 4H-SiC, experimental results (EPR) and DFT simulation results of electron spins and nuclear spins interaction, 2D confocal PL mapping of nitrogen implanted 4H-SiC samples, g2(0) value raw data verse background corrected data, the saturation behavior of the NV emitter, additional single NV emitter, g2 measurements under unsaturated and saturated powers, confocal mapping of focused nitrogen ion beam implanted sample and its PL spectra, ODMR contrast under nonresonant excitation with 980 nm laser at l0 K (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c02342/suppl_file/nl0c02342_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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