Abstract:Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched single photons, practical applications require tailoring of their emission through quantum cavity effects. In this work, we perform cavity quantum electrodynamics experiments with ensembles of artificial atoms embedded in silicon-on-insulator microresonators. The emitters under study, known as W color centers, are silicon tri-interstitial defects created upon self-ion implantation and thermal annealing. The resonators consist of circular Bragg grating cavities, designed for moderate Purcell enhancement ($F_p=12.5$) and efficient luminescence extraction ($\eta_{coll}=40\%$ for a numerical aperture of 0.26) for W centers located at the mode antinode. When the resonant frequency mode of the cavity is tuned with the zero-phonon transition of the emitters at 1218 nm, we observe a 20-fold enhancement of the zero-phonon line intensity, together with a two-fold decrease of the total relaxation time in time-resolved photoluminescence experiments. Based on finite-difference time-domain simulations, we propose a detailed theoretical analysis of Purcell enhancement for an ensemble of W centers, considering the overlap between the emitters and the resonant cavity mode. We obtain a good agreement with our experimental results assuming a quantum efficiency of $65 \pm 10 \%$ for the emitters in bulk silicon. Therefore, W centers open promising perspectives for the development of on-demand sources of single photons, harnessing cavity quantum electrodynamics in silicon photonic chips.

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Optical superradiance of a pair of color centers in an integrated silicon-carbide-on-insulator microresonator

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide

Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence

Quantum Photonics Incorporating Color Centers in Silicon Carbide and Diamond

Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide

Quantum photonics in triangular-cross-section nanodevices in silicon carbide

Silicon Carbide Photonic Crystal Cavities with Integrated Color Centers

Wafer-Scale Integration of Freestanding Photonic Devices with Color Centers in Silicon Carbide

Quantum Information Processing With Integrated Silicon Carbide Photonics

Silicon carbide color centers for quantum applications

Purcell enhancement of silicon W centers in circular Bragg grating cavities

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

Cavity-enhanced measurements of defect spins in silicon carbide

Spin-photon entanglement interfaces in silicon carbide defect centers

Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis)