Abstract:The negatively charged silicon monovacancy $V_{Si}^-$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal cavities (PCCs) can augment the optical emission of the $V_{Si}^-$, yet fine-tuning the defect-cavity interaction remains challenging. We report on two post-fabrication processes that result in enhancement of the $V_1^{'}$ optical emission from our 1-dimensional PCCs, indicating improved coupling between the ensemble of silicon vacancies and the PCC. One process involves below bandgap illumination at 785 nm and 532 nm wavelengths and above bandgap illumination at 325 nm, carried out at times ranging from a few minutes to several hours. The other process is thermal annealing at $100^o C$, carried out over 20 minutes. Every process except above bandgap irradiation improves the defect-cavity coupling, manifested in augmented Purcell factor enhancement of the $V_1^{'}$ zero phonon line at 77K. The below bandgap laser process is attributed to a modification of charge states, changing the relative ratio of $V_{Si}^0$ (dark state) to $V_{Si}^-$ (bright state), while the thermal annealing process may be explained by diffusion of carbon interstitials, $C_i$, that subsequently recombine with other defects to create additional $V_{Si}^-$s. Above bandgap radiation is proposed to initially convert $V_{Si}^{0}$ to $V_{Si}^-$, but also may lead to diffusion of $V_{Si}^-$ away from the probe area, resulting in an irreversible reduction of the optical signal. Observations of the PCC spectra allow insights into defect modifications and interactions within a controlled, designated volume and indicate pathways to improve defect-cavity interactions.

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

Cavity-enhanced measurements of defect spins in silicon carbide

Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing

Cavity enhanced emission from a silicon T center

Purcell enhancement of silicon W centers in circular Bragg grating cavities

Optical and strain stabilization of point defects in silicon carbide

Purcell enhancement and spin spectroscopy of silicon vacancy centers in silicon carbide using an ultra-small mode-volume plasmonic cavity

Photon Collection Enhancement of Shallow Single Spin Defects in Silicon Carbide

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Purcell Enhancement and Spin Spectroscopy of Silicon Vacancy Centers in Silicon Carbide Using an Ultrasmall Mode-Volume Plasmonic Cavity

Silicon Carbide Photonic Crystal Cavities with Integrated Color Centers

Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN

Optical superradiance of a pair of color centers in an integrated silicon-carbide-on-insulator microresonator

Cavity-coupled telecom atomic source in silicon

Deterministic coupling of a single silicon-vacancy color center to a photonic crystal cavity in diamond

Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide

Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis)

Purcell enhancement of erbium ions in TiO$_{2}$ on silicon nanocavities

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

Plasmonic-enhanced bright single spin defects in silicon carbide membranes

Optimization of the power broadening in optically detected magnetic resonance of defect spins in silicon carbide