Abstract:Color centers in silicon carbide (SiC) have demonstrated significant promise for quantum information processing. However, the undesirable ionization process that occurs during optical manipulation frequently causes fluctuations in the charge state and performance of these defects, thereby restricting the effectiveness of spin-photon interfaces. Recent predictions indicate that divacancy defects near stacking faults possess the capability to stabilize their neutral charge states, thereby providing robustness against photoionization effects. In this work, we present a comprehensive protocol for the scalable and targeted fabrication of single divacancy arrays in 4H-SiC using a high-resolution focused helium ion beam. Through photoluminescence emission (PLE) experiments, we demonstrate long-term emission stability with minimal linewidth shift ($\sim$ 50 MHz over 3 hours) for the single c-axis divacancies within stacking faults. By measuring the ionization rate for different polytypes of divacancies, we found that the divacancies within stacking faults are more robust against resonant excitation. Additionally, angle-resolved PLE spectra reveal their two resonant-transition lines with mutually orthogonal polarizations. Notably, the PLE linewidths are approximately 7 times narrower and the spin-coherent times are 6 times longer compared to divacancies generated via carbon-ion implantation. These findings highlight the immense potential of SiC divacancies for on-chip quantum photonics and the construction of efficient spin-to-photon interfaces, indicating a significant step forward in the development of quantum technologies.

Photon Collection Enhancement of Shallow Single Spin Defects in Silicon Carbide

Plasmonic-enhanced bright single spin defects in silicon carbide membranes

Cavity-enhanced measurements of defect spins in silicon carbide

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

Fabrication and quantum sensing of spin defects in silicon carbide

Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast

Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide

Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

Experimental Generation of Spin-Photon Entanglement in Silicon Carbide

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Enhancement of silicon vacancy fluorescence intensity in silicon carbide using a dielectric cavity

Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide

Spin-photon entanglement interfaces in silicon carbide defect centers

High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide

Nanoscale Depth Control of Implanted Shallow Silicon Vacancies in Silicon Carbide

High-throughput identification of spin-photon interfaces in silicon

Optical charge state control of spin defects in 4H-SiC