Abstract:Color centers in silicon carbide (SiC) have demonstrated significant promise for quantum information processing. However, the undesirable ionization process that occurs during optical manipulation frequently causes fluctuations in the charge state and performance of these defects, thereby restricting the effectiveness of spin-photon interfaces. Recent predictions indicate that divacancy defects near stacking faults possess the capability to stabilize their neutral charge states, thereby providing robustness against photoionization effects. In this work, we present a comprehensive protocol for the scalable and targeted fabrication of single divacancy arrays in 4H-SiC using a high-resolution focused helium ion beam. Through photoluminescence emission (PLE) experiments, we demonstrate long-term emission stability with minimal linewidth shift ($\sim$ 50 MHz over 3 hours) for the single c-axis divacancies within stacking faults. By measuring the ionization rate for different polytypes of divacancies, we found that the divacancies within stacking faults are more robust against resonant excitation. Additionally, angle-resolved PLE spectra reveal their two resonant-transition lines with mutually orthogonal polarizations. Notably, the PLE linewidths are approximately 7 times narrower and the spin-coherent times are 6 times longer compared to divacancies generated via carbon-ion implantation. These findings highlight the immense potential of SiC divacancies for on-chip quantum photonics and the construction of efficient spin-to-photon interfaces, indicating a significant step forward in the development of quantum technologies.

Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast

Room-temperature coherent control of implanted defect spins in silicon carbide

Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Room temperature coherent control of a single solid-state spin under anti-Stokes excitation

High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

Fabrication and quantum sensing of spin defects in silicon carbide

Isolated electron spins in silicon carbide with millisecond-coherence times

Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC

Optical charge state control of spin defects in 4H-SiC

Cavity-enhanced measurements of defect spins in silicon carbide

Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature

Coherent control of defect spins in silicon carbide above 550 K

Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation

Plasmonic-enhanced bright single spin defects in silicon carbide membranes

Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence

Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide

Extended spin relaxation times of optically addressed telecom defects in silicon carbide

Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide

Identification of Si-vacancy related room temperature qubits in 4H silicon carbide

High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide