[Neuromuscular action of an Echis carinatus (Viperidae) venom from Ethiopia].

J. Cheymol,F. Bourillet,M. Roch-Arveiller

1971-09-01

Abstract:

What problem does this paper attempt to address?

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Charles Babin,Rainer Stöhr,Naoya Morioka,Tobias Linkewitz,Timo Steidl,Raphael Wörnle,Di Liu,Erik Hesselmeier,Vadim Vorobyov,Andrej Denisenko,Mario Hentschel,Christian Gobert,Patrick Berwian,Georgy V. Astakhov,Wolfgang Knolle,Sridhar Majety,Pranta Saha,Marina Radulaski,Nguyen Tien Son,Jawad Ul-Hassan,Florian Kaiser,Jörg Wrachtrup

DOI: https://doi.org/10.1038/s41563-021-01148-3

2021-09-29

Abstract:Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In particular, we show nearly transform limited photon emission and record spin coherence times for single defects generated via ion implantation and in triangular cross section waveguides. For the latter, we show further controlled operations on nearby nuclear spin qubits, which is crucial for fault-tolerant quantum information distribution based on cavity quantum electrodynamics.

Quantum Physics
The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

Di Liu,Florian Kaiser,Vladislav Bushmakin,Erik Hesselmeier,Timo Steidl,Takeshi Ohshima,Nguyen Tien Son,Jawad Ul-Hassan,Öney O. Soykal,Jörg Wrachtrup

2023-07-26

Abstract:The negatively-charged silicon vacancy center ($\rm V_{Si}^-$) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available on the internal spin-optical dynamics of these color centers prevents us achieving the optimal operation conditions and reaching the maximum performance especially when integrated within quantum photonics. Here, we establish all the relevant intrinsic spin dynamics of negatively charged $\rm V_{Si}^-$ center in 4H-SiC by an in-depth electronic fine structure modeling including intersystem-crossing and deshelving mechanisms. With carefully designed spin-dependent measurements, we obtain all previously unknown spin-selective radiative and non-radiative decay rates. To showcase the relevance of our work for integrated quantum photonics, we use the obtained rates to propose a realistic implementation of time-bin entangled multi-photon GHZ and cluster state generation. We find that up to 3-photon GHZ/cluster states are readily within reach using the existing nanophotonic cavity technology.

Quantum Physics
High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

Roland Nagy,Matthias Niethammer,Matthias Widmann,Yu-Chen Chen,Péter Udvarhelyi,Cristian Bonato,Jawad Ul Hassan,Robin Karhu,Ivan G. Ivanov,Nguyen Tien Son,Jeronimo R. Maze,Takeshi Ohshima,Öney O. Soykal,Ádám Gali,Sang-Yun Lee,Florian Kaiser,Jörg Wrachtrup

DOI: https://doi.org/10.1038/s41467-019-09873-9

2018-10-24

Abstract:Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. Here, we release this stringent constraint by demonstrating outstanding optical and spin properties of single silicon vacancy centres in silicon carbide. Despite the lack of inversion symmetry, the system's particular wave function symmetry decouples its optical properties from magnetic and electric fields, as well as from local strain. This provides a high-fidelity spin-to-photon interface with exceptionally stable and narrow optical transitions, low inhomogeneous broadening, and a large fraction of resonantly emitted photons. Further, the weak spin-phonon coupling results in electron spin coherence times comparable with nitrogen-vacancy centres in diamond. This allows us to demonstrate coherent hyperfine coupling to single nuclear spins, which can be exploited as qubit memories. Our findings promise quantum network applications using integrated semiconductor-based spin-to-photon interfaces.

Quantum Physics,Mesoscale and Nanoscale Physics
Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide

Naoya Morioka,Di Liu,Öney O. Soykal,Izel Gediz,Charles Babin,Rainer Stöhr,Takeshi Ohshima,Nguyen Tien Son,Jawad Ul-Hassan,Florian Kaiser,Jörg Wrachtrup

DOI: https://doi.org/10.48550/arXiv.2203.08177

2022-03-15

Quantum Physics

Abstract:Color centers in silicon carbide are emerging candidates for distributed spin-based quantum applications due to the scalability of host materials and the demonstration of integration into nanophotonic resonators. Recently, silicon vacancy centers in silicon carbide have been identified as a promising system with excellent spin and optical properties. Here, we in-depth study the spin-optical dynamics of single silicon vacancy center at hexagonal lattice sites, namely V1, in 4H-polytype silicon carbide. By utilizing resonant and above-resonant sub-lifetime pulsed excitation, we determine spin-dependent excited-state lifetimes and intersystem-crossing rates. Our approach to inferring the intersystem-crossing rates is based on all-optical pulsed initialization and readout scheme, and is applicable to spin-active color centers with similar dynamics models. In addition, the optical transition dipole strength and the quantum efficiency of V1 defect are evaluated based on coherent optical Rabi measurement and local-field calibration employing electric-field simulation. The measured rates well explain the results of spin-state polarization dynamics, and we further discuss the altered photoemission dynamics in resonant enhancement structures such as radiative lifetime shortening and Purcell enhancement. By providing a thorough description of V1 center's spin-optical dynamics, our work provides deep understanding of the system which guides implementations of scalable quantum applications based on silicon vacancy centers in silicon carbide.
Fabrication and quantum sensing of spin defects in silicon carbide

Qin-Yue Luo,Qiang Li,Jun-Feng Wang,Pei-Jie Guo,Wu-Xi Lin,Shuang Zhao,Qi-Cheng Hu,Zi-Qi Zhu,Jin-Shi Xu,Chuan-Feng Li,Guang-Can Guo

DOI: https://doi.org/10.3389/fphy.2023.1270602

IF: 3.718

2023-09-26

Frontiers in Physics

Abstract:In the past decade, color centers in silicon carbide (SiC) have emerged as promising platforms for various quantum information technologies. There are three main types of color centers in SiC: silicon-vacancy centers, divacancy centers, and nitrogen-vacancy centers. Their spin states can be polarized by laser and controlled by microwave. These spin defects have been applied in quantum photonics, quantum information processing, quantum networks, and quantum sensing. In this review, we first provide a brief overview of the progress in single-color center fabrications for the three types of spin defects, which form the foundation of color center-based quantum technology. We then discuss the achievements in various quantum sensing, such as magnetic field, electric field, temperature, strain, and pressure. Finally, we summarize the current state of fabrications and quantum sensing of spin defects in SiC and provide an outlook for future developments.

physics, multidisciplinary
Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide

Naoya Morioka,Di Liu,Öney O. Soykal,Izel Gediz,Charles Babin,Rainer Stöhr,Takeshi Ohshima,Nguyen Tien Son,Jawad Ul-Hassan,Florian Kaiser,Jörg Wrachtrup,and Jörg Wrachtrup

DOI: https://doi.org/10.1103/PhysRevApplied.17.054005

IF: 4.6

2022-05-04

Physical Review Applied

Abstract:Color centers in silicon carbide are emerging candidates for distributed spin-based quantum applications due to the scalability of host materials and the demonstration of integration into nanophotonic resonators. Recently, silicon vacancy centers in silicon carbide have been identified as a promising system with excellent spin and optical properties. Here, we fully study the spin-optical dynamics of the single silicon vacancy center at hexagonal lattice sites, namely V1, in 4H-polytype silicon carbide. By utilizing resonant and above-resonant sublifetime pulsed excitation, we determine spin-dependent excited-state lifetimes and intersystem-crossing rates. Our approach to inferring the intersystem-crossing rates is based on all-optical pulsed initialization and readout scheme, and is applicable to spin-active color centers with similar dynamics models. In addition, the optical transition dipole strength and the quantum efficiency of V1 defect are evaluated based on coherent optical Rabi measurement and local-field calibration employing electric field simulation. The measured rates well explain the results of spin-state polarization dynamics, and we further discuss the altered photoemission dynamics in resonant enhancement structures such as radiative lifetime shortening and Purcell enhancement. By providing a thorough description of the V1 center's spin-optical dynamics, our work provides deep understanding of the system, which guides implementations of scalable quantum applications based on silicon vacancy centers in silicon carbide. https://doi.org/10.1103/PhysRevApplied.17.054005 © 2022 American Physical Society

physics, applied
Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Naoya Morioka,Charles Babin,Roland Nagy,Izel Gediz,Erik Hesselmeier,Di Liu,Matthew Joliffe,Matthias Niethammer,Durga Dasari,Vadim Vorobyov,Roman Kolesov,Rainer Stöhr,Jawad Ul-Hassan,Nguyen Tien Son,Takeshi Ohshima,Péter Udvarhelyi,Gergő Thiering,Adam Gali,Jörg Wrachtrup,Florian Kaiser

DOI: https://doi.org/10.1038/s41467-020-16330-5

IF: 16.6

2020-05-20

Nature Communications

Abstract:Abstract Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable photons via coherent spin manipulation. Using strong off-resonant excitation and collecting zero-phonon line photons, we show a two-photon interference contrast close to 90% in Hong-Ou-Mandel type experiments. Further, we exploit the system’s intimate spin-photon relation to spin-control the colour and indistinguishability of consecutively emitted photons. Our results provide a deep insight into the system’s spin-phonon-photon physics and underline the potential of the industrially compatible silicon carbide platform for measurement-based entanglement distribution and photonic cluster state generation. Additional coupling to quantum registers based on individual nuclear spins would further allow for high-level network-relevant quantum information processing, such as error correction and entanglement purification.

multidisciplinary sciences
Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Daniil M. Lukin,Melissa A. Guidry,Joshua Yang,Misagh Ghezellou,Sattwik Deb Mishra,Hiroshi Abe,Takeshi Ohshima,Jawad Ul-Hassan,and Jelena Vučković

DOI: https://doi.org/10.1103/PhysRevX.13.011005

2023-01-20

Physical Review X

Abstract:Color centers are point defects in crystals that can provide an optical interface to a long-lived spin state for distributed quantum information processing applications. An outstanding challenge for color center quantum technologies is the integration of optically coherent emitters into scalable thin-film photonics, a prerequisite for large-scale photonics integration of color centers within a commercial foundry process. Here, we report on the integration of near-transform-limited silicon vacancy ( VSi ) defects into microdisk resonators fabricated in a CMOS-compatible 4H -silicon carbide-on-insulator platform. We demonstrate a single-emitter cooperativity of up to 0.8 as well as optical superradiance from a pair of color centers coupled to the same cavity mode. We investigate the effect of multimode interference on the photon scattering dynamics from this multiemitter cavity quantum electrodynamics system. These results are crucial for the development of quantum networks in silicon carbide and bridge the classical-quantum photonics gap by uniting optically coherent spin defects with wafer-scalable, state-of-the-art photonics. https://doi.org/10.1103/PhysRevX.13.011005 Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Published by the American Physical Society

physics, multidisciplinary
Spectral stability of V2 centres in sub-micron 4H-SiC membranes

Jonah Heiler,Jonathan Körber,Erik Hesselmeier,Pierre Kuna,Rainer Stöhr,Philipp Fuchs,Misagh Ghezellou,Jawad Ul-Hassan,Wolfgang Knolle,Christoph Becher,Florian Kaiser,Jörg Wrachtrup

DOI: https://doi.org/10.1038/s41535-024-00644-4

2024-05-13

Abstract:Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic structures proved to be challenging due to reduced spectral stabilities. Here, we provide a large-scale systematic investigation on silicon vacancy centres in thin silicon carbide membranes with thicknesses down to $0.25\,\rm\mu m$. Our membrane fabrication process involves a combination of chemical mechanical polishing, reactive ion etching, and subsequent annealing. This leads to highly reproducible membranes with roughness values of $3-4\,\rmÅ$, as well as negligible surface fluorescence. We find that silicon vacancy centres show close-to lifetime limited optical linewidths with almost no signs of spectral wandering down to membrane thicknesses of $0.7 \,\rm\mu m$. For silicon vacancy centres in thinner membranes down to $0.25\,\rm\mu m$, we observe spectral wandering, however, optical linewidths remain below $200\,\rm MHz$, which is compatible with spin-selective excitation schemes. Our work clearly shows that silicon vacancy centres can be integrated into sub-micron silicon carbide membranes, which opens the avenue towards obtaining the necessary improvements in photon extraction efficiency based on nanophotonic structuring.

Quantum Physics,Optics
High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide

Junfeng Wang,Yu Zhou,Xiaoming Zhang,Fucai Liu,Yan Li,Ke Li,Zheng Liu,Guanzhong Wang,Weibo Gao

DOI: https://doi.org/10.48550/arXiv.1610.03978

2016-10-13

Quantum Physics

Abstract:Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single photon emission, good photostability, and long spin coherence time even at room temperature. As compared to diamond which is widely used for holding Nitrogen-vacancy centers, SiC has the advantage in terms of large-scale, high-quality and low cost growth, as well as advanced fabrication technique in optoelectronics, leading to the prospects for large scale quantum engineering. In this paper, we report experimental demonstration of the generation of nanoscale $V_{Si}$ single defect array through ion implantation without the need of annealing. $V_{Si}$ defects are generated in pre-determined locations with resolution of tens of nanometers. This can help in integrating $V_{Si}$ defects with the photonic structures which, in turn, can improve the emission and collection efficiency of $V_{Si}$ defects when it is used in spin photonic quantum network. On the other hand, the defects are shallow and they are generated $\sim 40nm$ below the surface which can serve as critical resources in quantum sensing application.
Optical superradiance of a pair of color centers in an integrated silicon-carbide-on-insulator microresonator

Daniil M. Lukin,Melissa A. Guidry,Joshua Yang,Misagh Ghezellou,Sattwik Deb Mishra,Hiroshi Abe,Takeshi Ohshima,Jawad Ul-Hassan,Jelena Vučković

DOI: https://doi.org/10.48550/arXiv.2202.04845

2022-02-10

Abstract:An outstanding challenge for color center-based quantum information processing technologies is the integration of optically-coherent emitters into scalable thin-film photonics. Here, we report on the integration of near-transform-limited silicon vacancy (V$_{\text{Si}}$) defects into microdisk resonators fabricated in a CMOS-compatible 4H-Silicon Carbide-on-Insulator platform. We demonstrate a single-emitter cooperativity of up to 0.8 as well as optical superradiance from a pair of color centers coupled to the same cavity mode. We investigate the effect of multimode interference on the photon scattering dynamics from this multi-emitter cavity quantum electrodynamics system. These results are crucial for the development of quantum networks in silicon carbide and bridge the classical-quantum photonics gap by uniting optically-coherent spin defects with wafer-scalable, state-of-the-art photonics.

Quantum Physics,Optics
Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

Marina Radulaski,Matthias Widmann,Matthias Niethammer,Jingyuan Linda Zhang,Sang-Yun Lee,Torsten Rendler,Konstantinos G. Lagoudakis,Nguyen Tien Son,Erik Janzén,Takeshi Ohshima,Jörg Wrachtrup,Jelena Vučković

DOI: https://doi.org/10.1021/acs.nanolett.6b05102

2017-02-26

Abstract:Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1,400 nm diameters. We obtain high collection efficiency, up to 22 kcounts/s optical saturation rates from a single silicon vacancy center, while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.

Optics,Materials Science,Quantum Physics
Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast

Qiang Li,Jun-Feng Wang,Fei-Fei Yan,Ji-Yang Zhou,Han-Feng Wang,He Liu,Li-Ping Guo,Xiong Zhou,Adam Gali,Zheng-Hao Liu,Zu-Qing Wang,Kai Sun,Guo-Ping Guo,Jian-Shun Tang,Hao Li,Li-Xing You,Jin-Shi Xu,Chuan-Feng Li,Guang-Can Guo

DOI: https://doi.org/10.1093/nsr/nwab122

IF: 20.6

2021-07-05

National Science Review

Abstract:Abstract Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room temperature single-spin manipulation of colour centres in SiC has been demonstrated, the typically detected contrast is less than 2$\%$, and the photon count rate is also low. Here, we present the coherent manipulation of single divacancy spins in 4H-SiC with a high readout contrast ($-30\%$) and a high photon count rate (150 kilo counts per second) under ambient conditions, which are competitive with the nitrogen-vacancy (NV) centres in diamond. Coupling between a single defect spin and a nearby nuclear spin is also observed. We further provide a theoretical explanation for the high readout contrast by analysing the defect levels and decay paths. Since the high readout contrast is of utmost importance in many applications of quantum technologies, this work might open a new territory for SiC-based quantum devices with many advanced properties of the host material.

multidisciplinary sciences
Room-temperature coherent control of implanted defect spins in silicon carbide

Fei-Fei Yan,Ai-Lun Yi,Jun-Feng Wang,Qiang Li,Pei Yu,Jia-Xiang Zhang,Adam Gali,Ya Wang,Jin-Shi Xu,Xin Ou,Chuan-Feng Li,Guang-Can Guo

DOI: https://doi.org/10.1038/s41534-020-0270-8

IF: 10.758

2020-05-14

npj Quantum Information

Abstract:Abstract Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken to identify spin systems in SiC and to extend their quantum capabilities using large-scale growth and advanced nanofabrication methods. Here we demonstrated a type of spin defect in the 4H polytype of SiC generated via hydrogen ion implantation with high-temperature post-annealing, which is different from any known defects. These spin defects can be optically addressed and coherently controlled even at room temperature, and their fluorescence spectrum and optically detected magnetic resonance spectra are different from those of any previously discovered defects. Moreover, the generation of these defects can be well controlled by optimizing the annealing temperature after implantation. These defects demonstrate high thermal stability with coherently controlled electron spins, facilitating their application in quantum sensing and masers under harsh conditions.

physics, condensed matter, applied, atomic, molecular & chemical,quantum science & technology
Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis)

Larisa Latypova,Fadis Murzakhanov,George Mamin,Margarita Sadovnikova,Hans Jurgen von Bardeleben,Julietta V. Rau,Marat Gafurov

DOI: https://doi.org/10.3390/molecules29133033

IF: 4.6

2024-06-27

Molecules

Abstract:High-spin defects (color centers) in wide-gap semiconductors are considered as a basis for the implementation of quantum technologies due to the unique combination of their spin, optical, charge, and coherent properties. A silicon carbide (SiC) crystal can act as a matrix for a wide variety of optically active vacancy-type defects, which manifest themselves as single-photon sources or spin qubits. Among the defects, the nitrogen-vacancy centers (NV) are of particular importance. This paper is devoted to the application of the photoinduced electron paramagnetic resonance (EPR) and electron–nuclear double resonance (ENDOR) techniques at a high-frequency range (94 GHz) to obtain unique information about the nature and properties of NV defects in SiC crystal of the hexagonal 4H and 6H polytypes. Selective excitation by microwave and radio frequency pulses makes it possible to determine the microscopic structure of the color center, the zero-field splitting constant (D = 1.2–1.3 GHz), the phase coherence time (T2), and the values of hyperfine (≈1.1 MHz) and quadrupole (Cq ≈ 2.45 MHz) interactions and to define the isotropic (a = −1.2 MHz) and anisotropic (b = 10–20 kHz) contributions of the electron–nuclear interaction. The obtained data are essential for the implementation of the NV defects in SiC as quantum registers, enabling the optical initialization of the electron spin to establish spin–photon interfaces. Moreover, the combination of optical, microwave, and radio frequency resonant effects on spin centers within a SiC crystal shows the potential for employing pulse EPR and ENDOR sequences to implement protocols for quantum computing algorithms and gates.

chemistry, multidisciplinary,biochemistry & molecular biology
Wafer-Scale Integration of Freestanding Photonic Devices with Color Centers in Silicon Carbide

Sridhar Majety,Victoria A. Norman,Pranta Saha,Alex H. Rubin,Scott Dhuey,Marina Radulaski

2024-05-13

Abstract:Color center platforms have been at the forefront of quantum nanophotonics for applications in quantum networking, computing, and sensing. However, large-scale deployment of this technology has been stifled by a lack of ability to integrate photonic devices at scale while maintaining the properties of quantum emitters. We address this challenge in silicon carbide which has both commercially available wafer-scale substrates and is a host to color centers with desirable optical and spin properties. Using ion beam etching at an angle, we develop a 5-inch wafer process for the fabrication of triangular cross-section photonic devices in bulk 4H-SiC. The developed process has a variability in etch rate and etch angle of 5.4% and 2.9%, respectively. Furthermore, the integrated color centers maintain their optical properties after the etch, thus achieving the nanofabrication goal of wafer-scale nanofabrication in quantum-grade silicon carbide.

Optics,Applied Physics
Silicon Carbide Photonic Crystal Cavities with Integrated Color Centers

Greg Calusine,Alberto Politi,David D. Awschalom

DOI: https://doi.org/10.1063/1.4890083

2014-05-20

Abstract:The recent discovery of color centers with optically addressable spin states in 3C silicon carbide (SiC) similar to the negatively charged nitrogen vacancy center in diamond has the potential to enable the integration of defect qubits into established wafer scale device architectures for quantum information and sensing applications. Here we demonstrate the design, fabrication, and characterization of photonic crystal cavities in 3C SiC films with incorporated ensembles of color centers and quality factor (Q) to mode volume ratios similar to those achieved in diamond. Simulations show that optimized H1 and L3 structures exhibit Q as high as 45,000 and mode volumes of approximately $(\lambda/n)^{3}$. We utilize the internal color centers as a source of broadband excitation to characterize fabricated structures with resonances tuned to the color center zero phonon line and observe Q in the range of 900-1,500 with narrowband photoluminescence collection enhanced by up to a factor of 10. By comparing the Q factors observed for different geometries with finite-difference time-domain simulations, we find evidence that nonvertical sidewalls are likely the dominant source of discrepancies between our simulated and measured Q factors. These results indicate that defect qubits in 3C SiC thin films show clear promise as a simple, scalable platform for interfacing defect qubits with photonic, optoelectronic, and optomechanical devices.

Mesoscale and Nanoscale Physics,Materials Science,Optics,Quantum Physics
Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature

Timo Steidl,Pierre Kuna,Erik Hesselmeier-Hüttmann,Di Liu,Rainer Stöhr,Wolfgang Knolle,Misagh Ghezellou,Jawad Ul-Hassan,Maximilian Schober,Michel Bockstedte,Adam Gali,Vadim Vorobyov,Jörg Wrachtrup

2024-10-12

Abstract:Nanoelectrical and photonic integration of quantum optical components is crucial for scalable solid-state quantum technologies. Silicon carbide stands out as a material with mature quantum defects and a wide variety of applications in semiconductor industry. Here, we study the behaviour of single silicon vacancy (V2) colour centres in a metal-semiconductor (Au/Ti/4H-SiC) epitaxial wafer device, operating in a Schottky diode configuration. We explore the depletion of free carriers in the vicinity of the defect, as well as electrical tuning of the defect optical transition lines. By detecting single charge traps, we investigate their impact on V2 optical line width. Additionally, we investigate the charge-photon-dynamics of the V2 centre and find its dominating photon-ionisation processes characteristic rate and wavelength dependence. Finally, we probe the spin coherence properties of the V2 system in the junction and demonstrate several key protocols for quantum network applications. Our work shows the first demonstration of low temperature integration of a Schottky device with optical microstructures for quantum applications and paves the way towards fundamentally scalable and reproducible optical spin defect centres in solids.

Quantum Physics

[Neuromuscular action of an Echis carinatus (Viperidae) venom from Ethiopia].

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide

Fabrication and quantum sensing of spin defects in silicon carbide

Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Spectral stability of V2 centres in sub-micron 4H-SiC membranes

High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide

Optical superradiance of a pair of color centers in an integrated silicon-carbide-on-insulator microresonator

Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast

Room-temperature coherent control of implanted defect spins in silicon carbide

Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis)

Wafer-Scale Integration of Freestanding Photonic Devices with Color Centers in Silicon Carbide

Silicon Carbide Photonic Crystal Cavities with Integrated Color Centers

Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature