Abstract:High-spin defects (color centers) in wide-gap semiconductors are considered as a basis for the implementation of quantum technologies due to the unique combination of their spin, optical, charge, and coherent properties. A silicon carbide (SiC) crystal can act as a matrix for a wide variety of optically active vacancy-type defects, which manifest themselves as single-photon sources or spin qubits. Among the defects, the nitrogen-vacancy centers (NV) are of particular importance. This paper is devoted to the application of the photoinduced electron paramagnetic resonance (EPR) and electron–nuclear double resonance (ENDOR) techniques at a high-frequency range (94 GHz) to obtain unique information about the nature and properties of NV defects in SiC crystal of the hexagonal 4H and 6H polytypes. Selective excitation by microwave and radio frequency pulses makes it possible to determine the microscopic structure of the color center, the zero-field splitting constant (D = 1.2–1.3 GHz), the phase coherence time (T2), and the values of hyperfine (≈1.1 MHz) and quadrupole (Cq ≈ 2.45 MHz) interactions and to define the isotropic (a = −1.2 MHz) and anisotropic (b = 10–20 kHz) contributions of the electron–nuclear interaction. The obtained data are essential for the implementation of the NV defects in SiC as quantum registers, enabling the optical initialization of the electron spin to establish spin–photon interfaces. Moreover, the combination of optical, microwave, and radio frequency resonant effects on spin centers within a SiC crystal shows the potential for employing pulse EPR and ENDOR sequences to implement protocols for quantum computing algorithms and gates.

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide

Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Fabrication and quantum sensing of spin defects in silicon carbide

Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis)

Purcell enhancement and spin spectroscopy of silicon vacancy centers in silicon carbide using an ultra-small mode-volume plasmonic cavity

Purcell Enhancement and Spin Spectroscopy of Silicon Vacancy Centers in Silicon Carbide Using an Ultrasmall Mode-Volume Plasmonic Cavity

Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC

Experimental Optical Properties of Single Nitrogen Vacancy Centers in Silicon Carbide at Room Temperature

All-Optical Spin Initialization via a Cavity Broadened Optical Transition in On-Chip Hybrid Quantum Photonics

Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Optical superradiance of a pair of color centers in an integrated silicon-carbide-on-insulator microresonator

All-optical spin access via a cavity-broadened optical transition in on-chip hybrid quantum photonics

Extended spin relaxation times of optically addressed telecom defects in silicon carbide

Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC

Cavity-enhanced measurements of defect spins in silicon carbide