Abstract:Optically addressable spin defects in silicon carbide (SiC) have emerged as attractable platforms for various quantum technologies. However, the low photon count rate significantly limits their applications. We strongly enhanced the brightness by 7 times and spin-control strength by 14 times of single divacancy defects in 4H-SiC membranes using surface plasmon generated by gold film coplanar waveguides. The mechanism of the plasmonic-enhanced effect is further studied by tuning the distance between single defects and the surface of the gold film. A three-energy-level model is used to determine the corresponding transition rates consistent with the enhanced brightness of single defects. Lifetime measurements also verified the coupling between defects and surface plasmons. Our scheme is low-cost, without complicated microfabrication and delicate structures, which is applicable for other spin defects in different materials. This work would promote developing spin defect-based quantum applications in mature SiC materials.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to increase the photon counting rate of single - defect spins in silicon carbide (SiC), thereby enhancing its performance in quantum technology applications. Specifically, the authors significantly enhance the brightness and spin - control intensity of single divacancy defects in 4H - SiC films by using surface plasmons generated by gold - film coplanar waveguides. The solution of these problems is of great significance for promoting the development of quantum information technology based on SiC materials. ### Main research contents: 1. **Enhancement mechanism**: Through the surface - plasmon - enhancement effect, the brightness of a single PL6 defect is increased by a factor of 7, and the spin - control intensity is increased by a factor of 14. 2. **Experimental setup**: A simple enhancement device was constructed. A 4H - SiC film was attached to a silicon substrate coated with a gold - film coplanar waveguide, and surface - plasmon - enhanced fluorescence was utilized. 3. **Distance optimization**: By adjusting the distance between the defect and the gold film, the optimal enhancement effect was found, and the maximum saturation count occurred at a distance of approximately 15 nanometers. 4. **Energy - level analysis**: By fitting the laser - power - dependent second - order intensity - correlation function with a three - level model, it was verified that the surface plasmons accelerate the transition rate inside the defect, thereby enhancing the fluorescence. 5. **Lifetime measurement**: The non - resonant excitation lifetimes of enhanced and non - enhanced single PL6 defects were directly measured, further confirming the coupling between the defect and the surface plasmons. ### Key results: - **Brightness enhancement**: The brightness of a single PL6 defect is increased by a factor of 7, and the saturation counting rate exceeds 1 Mcps. - **Spin control**: The spin Rabi frequency is increased by a factor of 16, reaching 70 MHz. - **Distance - dependence**: The optimal enhancement effect occurs at a distance of approximately 15 nanometers between the defect and the gold film. - **Energy - level transition**: Surface plasmons accelerate the transition rate inside the defect and shorten the excited - state lifetime. - **Lifetime measurement**: The directly measured lifetime data are consistent with the results of the three - level model fitting, further confirming the coupling between the defect and the surface plasmons. ### Significance: This work provides a simple and efficient enhancement scheme that does not require complex micromachining techniques and structures and can be conveniently applied to other types of defects and different materials. The enhanced brightness and coherent spin - control ability of single PL6 defects help to improve the signal - to - noise ratio and state - readout fidelity in SiC - based quantum networks, which is of great significance for the application of spin defects in solid - state materials in quantum technology.

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