Abstract:The negatively charged silicon monovacancy $V_{Si}^-$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal cavities (PCCs) can augment the optical emission of the $V_{Si}^-$, yet fine-tuning the defect-cavity interaction remains challenging. We report on two post-fabrication processes that result in enhancement of the $V_1^{'}$ optical emission from our 1-dimensional PCCs, indicating improved coupling between the ensemble of silicon vacancies and the PCC. One process involves below bandgap illumination at 785 nm and 532 nm wavelengths and above bandgap illumination at 325 nm, carried out at times ranging from a few minutes to several hours. The other process is thermal annealing at $100^o C$, carried out over 20 minutes. Every process except above bandgap irradiation improves the defect-cavity coupling, manifested in augmented Purcell factor enhancement of the $V_1^{'}$ zero phonon line at 77K. The below bandgap laser process is attributed to a modification of charge states, changing the relative ratio of $V_{Si}^0$ (dark state) to $V_{Si}^-$ (bright state), while the thermal annealing process may be explained by diffusion of carbon interstitials, $C_i$, that subsequently recombine with other defects to create additional $V_{Si}^-$s. Above bandgap radiation is proposed to initially convert $V_{Si}^{0}$ to $V_{Si}^-$, but also may lead to diffusion of $V_{Si}^-$ away from the probe area, resulting in an irreversible reduction of the optical signal. Observations of the PCC spectra allow insights into defect modifications and interactions within a controlled, designated volume and indicate pathways to improve defect-cavity interactions.

On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

On-demand generation of shallow silicon vacancy in silicon carbide

High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide

Maskless Generation of Single Silicon Vacancy Arrays in Silicon Carbide by a Focused He + Ion Beam

Nanoscale Depth Control of Implanted Shallow Silicon Vacancies in Silicon Carbide

Room-temperature coherent control of implanted defect spins in silicon carbide

Nanotesla Magnetometry with the Silicon Vacancy in Silicon Carbide

Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide

Experimental Generation of Spin-Photon Entanglement in Silicon Carbide

Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast

Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation

Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Deterministic Laser Writing of Spin Defects in Nanophotonic Cavities

Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride

Engineering the formation of spin-defects from first principles

Cavity-enhanced measurements of defect spins in silicon carbide

Plasmonic-enhanced bright single spin defects in silicon carbide membranes