Abstract:Quantum computing offers the potential to revolutionize information processing by exploiting the principles of quantum mechanics. Among the diverse quantum bit (qubit) technologies, silicon-based semiconductor spin qubits have emerged as a promising contender due to their potential scalability and compatibility with existing semiconductor technologies. In this paper, the latest developments of spin qubits in gate-defined semiconducting nanostructures made of silicon and germanium, starting from the basic properties of electron and hole states in group-IV semiconductors, are reviewed. Specifically, various nanostructures that exploit their unique microscopic properties for qubit implementations, elaborating on the advances and challenges in experiments, are discussed. Strategies for enhancing qubit performance, such as designing new nanostructures and identifying suitable operating points, particularly those involving the valleys of electron qubits and the heavy-hole-light-hole mixing of hole qubits, are also highlighted. This comprehensive review thus provides valuable insights into the current state-of-the-art in semiconductor quantum computing and suggests avenues for future research. Silicon-based spin quantum bits (qubits) have emerged as a promising platform for large-scale quantum computing due to their compatibility with the semiconductor fabrication technology. This review covers the latest developments of spin qubits in various gate-defined semiconducting nanostructures made of silicon and germanium, and highlights strategies for enhancing qubit performance, such as designing new nanostructures and identifying suitable operating points.image

Engineering the formation of spin-defects from first principles

Room-temperature coherent control of implanted defect spins in silicon carbide

First principles calculation of spin-related quantities for point defect qubit research

Optical charge state control of spin defects in 4H-SiC

First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC

Resolving the positions of defects in superconducting quantum bits

Electrical and optical control of single spins integrated in scalable semiconductor devices

On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

Progress of Gate-Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast

Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide

Probing spin-phonon interactions in silicon carbide with Gaussian acoustics

Room temperature coherent control of a single solid-state spin under anti-Stokes excitation

Coherent control of defect spins in silicon carbide above 550 K

Deterministic Laser Writing of Spin Defects in Nanophotonic Cavities

Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide

Manipulating solid-state spin concentration through charge transport

First-principles computational methods for quantum defects in two-dimensional materials: A perspective

Quantum computing with defects

On-demand generation of shallow silicon vacancy in silicon carbide

Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride