Abstract:Two-dimensional (2D) materials have emerged as promising platforms for quantum technologies and optoelectronics, with defects playing a crucial role in their properties. We present a comprehensive density functional theory study of silicon and carbon vacancies in monolayer silicon carbide (1L-SiC), a wide-bandgap 2D semiconductor with potential for room-temperature quantum applications. Using PBE, SCAN, r$^2$SCAN, and HSE06 functionals, we reveal distinct characteristics between Si and C vacancies. Formation energies and charge transition levels show strong functional dependence, with HSE06 consistently predicting higher values and deeper transition levels compared to PBE calculations. Electronic structure analysis demonstrates contrasting behavior: silicon vacancies create highly localized states with strong spin polarization, while carbon vacancies produce more dispersed states with weaker magnetic properties. Vacancy migration studies reveal significantly lower barriers for silicon vacancies compared to carbon vacancies, indicating higher mobility for Si vacancies at moderate temperatures. Optical properties, calculated using PBE-DFPT, show distinct charge-state dependent absorption in the far-infrared region, with positively charged states of both vacancy types demonstrating the strongest response. The complementary characteristics of Si and C vacancies - localized versus dispersed states, different magnetic properties, and distinct optical responses - suggest possibilities for defect engineering in quantum and optoelectronic applications. Our results highlight the critical importance of advanced functionals in accurately describing defect properties and provide a comprehensive framework for understanding vacancy behavior in 2D materials.

First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC

Theory of the divacancy in 4H-SiC: Impact of Jahn-Teller effect on optical properties

First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC

Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation

Characterization and formation of NV centers in 3C, 4H and 6H SiC: an \emph{ab initio} study

Engineering the formation of spin-defects from first principles

Vacancy-related color centers in two-dimensional silicon carbide monolayers

Electrometry by optical charge conversion of deep defects in 4H-SiC

Dipolar spin relaxation of divacancy qubits in silicon carbide

Vacancy-related color centers in twodimensional silicon carbide monolayers

Identification of Si-vacancy related room temperature qubits in 4H silicon carbide

Optical charge state control of spin defects in 4H-SiC

Vacancy-Induced Quantum Properties in 2D Silicon Carbide: Atomistic insights from semi-local and hybrid DFT calculations

Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC

The positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC

Theoretical polarization of zero phonon lines in point defects

First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC

On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

Transition metal impurities in Silicon: Computational search for a semiconductor qubit

Assessing the potential of perfect screw dislocations in SiC for solid-state quantum technologies

Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC