Abstract:The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications under development. So far, it has been accomplished for only two defect centres in crystalline solids: phosphorus dopants in silicon, for which electrical read-out based on a single-electron transistor is used, and nitrogen-vacancy centres in diamond, for which optical read-out is used. A spin read-out fidelity of about 90 per cent has been demonstrated with both electrical read-out and optical read-out; however, the thermal limitations of the former and the poor photon collection efficiency of the latter make it difficult to achieve the higher fidelities required for quantum information applications. Here we demonstrate a hybrid approach in which optical excitation is used to change the charge state (conditional on its spin state) of an erbium defect centre in a silicon-based single-electron transistor, and this change is then detected electrically. The high spectral resolution of the optical frequency-addressing step overcomes the thermal broadening limitation of the previous electrical read-out scheme, and the charge-sensing step avoids the difficulties of efficient photon collection. This approach could lead to new architectures for quantum information processing devices and could drastically increase the range of defect centres that can be exploited. Furthermore, the efficient electrical detection of the optical excitation of single sites in silicon represents a significant step towards developing interconnects between optical-based quantum computing and silicon technologies.

Electrometry by optical charge conversion of deep defects in 4H-SiC

Heterodyne detection of radio-frequency electric fields using point defects in silicon carbide

Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions

Optical charge state control of spin defects in 4H-SiC

First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC

Nanotesla Magnetometry with the Silicon Vacancy in Silicon Carbide

Probing spin-phonon interactions in silicon carbide with Gaussian acoustics

Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs

Electrical charge state identification and control for the silicon vacancy in 4H-SiC

Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC

Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

The positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC

Cavity-enhanced measurements of defect spins in silicon carbide

Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC

Optical Addressing of an Individual Erbium Ion in Silicon

Correlating dynamic strain and photoluminescence of solid-state defects with stroboscopic x-ray diffraction microscopy

Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs

First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC

Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN

Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors

Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers