Abstract:The negatively charged silicon monovacancy $V_{Si}^-$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal cavities (PCCs) can augment the optical emission of the $V_{Si}^-$, yet fine-tuning the defect-cavity interaction remains challenging. We report on two post-fabrication processes that result in enhancement of the $V_1^{'}$ optical emission from our 1-dimensional PCCs, indicating improved coupling between the ensemble of silicon vacancies and the PCC. One process involves below bandgap illumination at 785 nm and 532 nm wavelengths and above bandgap illumination at 325 nm, carried out at times ranging from a few minutes to several hours. The other process is thermal annealing at $100^o C$, carried out over 20 minutes. Every process except above bandgap irradiation improves the defect-cavity coupling, manifested in augmented Purcell factor enhancement of the $V_1^{'}$ zero phonon line at 77K. The below bandgap laser process is attributed to a modification of charge states, changing the relative ratio of $V_{Si}^0$ (dark state) to $V_{Si}^-$ (bright state), while the thermal annealing process may be explained by diffusion of carbon interstitials, $C_i$, that subsequently recombine with other defects to create additional $V_{Si}^-$s. Above bandgap radiation is proposed to initially convert $V_{Si}^{0}$ to $V_{Si}^-$, but also may lead to diffusion of $V_{Si}^-$ away from the probe area, resulting in an irreversible reduction of the optical signal. Observations of the PCC spectra allow insights into defect modifications and interactions within a controlled, designated volume and indicate pathways to improve defect-cavity interactions.

Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing

Enhancement of silicon vacancy fluorescence intensity in silicon carbide using a dielectric cavity

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

Purcell enhancement and spin spectroscopy of silicon vacancy centers in silicon carbide using an ultra-small mode-volume plasmonic cavity

Deterministic Laser Writing of Spin Defects in Nanophotonic Cavities

Purcell Enhancement and Spin Spectroscopy of Silicon Vacancy Centers in Silicon Carbide Using an Ultrasmall Mode-Volume Plasmonic Cavity

Optical charge state control of spin defects in 4H-SiC

Cavity-enhanced measurements of defect spins in silicon carbide

High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide

Extended spin relaxation times of optically addressed telecom defects in silicon carbide

Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation

The positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC

Room-temperature coherent control of implanted defect spins in silicon carbide

Optical and strain stabilization of point defects in silicon carbide

Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer

On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

On-demand generation of shallow silicon vacancy in silicon carbide

Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Electrical charge state identification and control for the silicon vacancy in 4H-SiC