Abstract:Color centers in silicon carbide (SiC) have demonstrated significant promise for quantum information processing. However, the undesirable ionization process that occurs during optical manipulation frequently causes fluctuations in the charge state and performance of these defects, thereby restricting the effectiveness of spin-photon interfaces. Recent predictions indicate that divacancy defects near stacking faults possess the capability to stabilize their neutral charge states, thereby providing robustness against photoionization effects. In this work, we present a comprehensive protocol for the scalable and targeted fabrication of single divacancy arrays in 4H-SiC using a high-resolution focused helium ion beam. Through photoluminescence emission (PLE) experiments, we demonstrate long-term emission stability with minimal linewidth shift ($\sim$ 50 MHz over 3 hours) for the single c-axis divacancies within stacking faults. By measuring the ionization rate for different polytypes of divacancies, we found that the divacancies within stacking faults are more robust against resonant excitation. Additionally, angle-resolved PLE spectra reveal their two resonant-transition lines with mutually orthogonal polarizations. Notably, the PLE linewidths are approximately 7 times narrower and the spin-coherent times are 6 times longer compared to divacancies generated via carbon-ion implantation. These findings highlight the immense potential of SiC divacancies for on-chip quantum photonics and the construction of efficient spin-to-photon interfaces, indicating a significant step forward in the development of quantum technologies.

Plasmonic-Enhanced Bright Single Spin Defects in Silicon Carbide Membranes

Plasmonic-enhanced bright single spin defects in silicon carbide membranes

Photon Collection Enhancement of Shallow Single Spin Defects in Silicon Carbide

Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation

Room-temperature coherent control of implanted defect spins in silicon carbide

Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast

Optical charge state control of spin defects in 4H-SiC

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

Optically addressable spin defects coupled to bound states in the continuum metasurfaces

Plasmonic Diamond Membranes for Ultrafast Silicon Vacancy Emission

Purcell Enhancement and Spin Spectroscopy of Silicon Vacancy Centers in Silicon Carbide Using an Ultrasmall Mode-Volume Plasmonic Cavity

On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

Purcell enhancement and spin spectroscopy of silicon vacancy centers in silicon carbide using an ultra-small mode-volume plasmonic cavity

Cavity-enhanced measurements of defect spins in silicon carbide

Nanoscale Depth Control of Implanted Shallow Silicon Vacancies in Silicon Carbide

Deterministic Laser Writing of Spin Defects in Nanophotonic Cavities

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN

Electrical and optical control of single spins integrated in scalable semiconductor devices

High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide