Abstract:Photonic integrated circuits (PICs) based on lithographically patterned waveguides provide a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a wide range of photonic technologies with desired complexity and stability. While the next generation of applications such as ultra-high speed optical transceivers, neuromorphic computing and terabit-scale communications demand further lower power consumption and higher operating frequency. Complementing the leading silicon-based material platforms, the third-generation semiconductor, silicon carbide (SiC), offers a significant opportunity toward the advanced development of PICs in terms of its broadest range of functionalities, including wide bandgap, high optical nonlinearities, high refractive index, controllable artificial spin defects and complementary metal oxide semiconductor-compatible fabrication process. The superior properties of SiC have enabled a plethora of nano-photonic explorations, such as waveguides, micro-cavities, nonlinear frequency converters and optically-active spin defects. This remarkable progress has prompted the rapid development of advanced SiC PICs for both classical and quantum applications. Here, we provide an overview of SiC-based integrated photonics, presenting the latest progress on investigating its basic optoelectronic properties, as well as the recent developments in the fabrication of several typical approaches for light confinement structures that form the basic building blocks for low-loss, multi-functional and industry-compatible integrated photonic platform. Moreover, recent works employing SiC as optically-readable spin hosts for quantum information applications are also summarized and highlighted. As a still-developing integrated photonic platform, prospects and challenges of utilizing SiC material platforms in the field of integrated photonics are also discussed.

Quantum Information Processing With Integrated Silicon Carbide Photonics

Quantum Photonics Incorporating Color Centers in Silicon Carbide and Diamond

Silicon carbide color centers for quantum applications

Silicon Photonic Devices for Scalable Quantum Information Applications

Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics

Wafer-Scale Integration of Freestanding Photonic Devices with Color Centers in Silicon Carbide

Quantum photonics in triangular-cross-section nanodevices in silicon carbide

Utilizing photonic band gap in triangular silicon carbide structures for efficient quantum nanophotonic hardware

Advances in Chip‐Scale Quantum Photonic Technologies

Silicon-based Photonic Quantum Information Technologies

Silicon photonics interfaced with microelectronics for integrated photonic quantum technologies: a new era in advanced quantum computers and quantum communications?

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Silicon carbide for integrated photonics

Silicon Quantum Photonics

Optoelectronics of Color Centers in Diamond and Silicon Carbide: From Single‐Photon Luminescence to Electrically Controlled Spin Qubits

Silicon Photonic Network-on-chip and Enabling Components

Silicon Photonics for Quantum Communication

Pioneering the future with silicon carbide integrated photonics

Triangular Cross-Section Beam Splitters in Silicon Carbide for Quantum Information Processing