Abstract:Recent efforts in quantum photonics emphasize on-chip generation, manipulation, and detection of single photons for quantum computing and quantum communication. In quantum photonic chips, single photons are often generated using parametric down-conversion and quantum dots. Quantum dots are particularly attractive due to their on-demand generation of high-purity single photons. Different photonic platforms are used to manipulate the states of the photons. Nevertheless, no single platform satisfies all the requirements of quantum photonics, as each platform has its merits and shortcomings. For example, the thin-film silicon nitride (SiN) platform provides ultra-low loss on the order of 0.1 dB/m, but is incompatible with dense integration, requiring large bending radii. On the other hand, silicon on insulator offers a high refractive index contrast for dense integration but has a high absorption coefficient at the emission wavelengths (800-970 nm) of state-of-the-art QDs. Amorphous silicon carbide (a-SiC) has emerged as an alternative with a high refractive index (higher than SiN), an extended transparency window compared to Silicon, and a thermo-optic coefficient three times higher than that of SiN, which is crucial for tuning photonic devices on a chip. With the vision of realizing a quantum photonic integrated circuit, we explore the hybrid integration of SiN/a-SiC photonic platform with quantum dots and superconducting nanowire single-photon detectors. We validate our hybrid platform using a brief literature study, proof-of-principle experiments, and complementary simulations. As a proof-of-principle, we show a quantum dot embedded in nanowires (for deterministic micro-transfer and better integration) that emits single photons at 885 nm with a purity of 0.011 and a lifetime of 0.98 ns. Furthermore, we design and simulate an adiabatic coupler between two photonic platforms, a-SiC and SiN, by aiming to use the benefits of both platforms, i.e. dense integration and low losses, respectively. Our design couples the light from SiN waveguide to a-SiC waveguide with 96% efficiency at 885 nm wavelength. Our hybrid platform can be used to demonstrate on-chip quantum experiments such as Hong-Ou-Mandel, where we can design a large optical delay line in SiN and an interference circuit in a-SiC.

4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics

Quantum Information Processing With Integrated Silicon Carbide Photonics

Silicon Photonic Devices for Scalable Quantum Information Applications

Hybrid integration of deterministic quantum dots-based single-photon sources with CMOS-compatible silicon carbide photonics

Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

Quantum Photonics Incorporating Color Centers in Silicon Carbide and Diamond

An integrated 3C-silicon carbide-on-insulator photonic platform for nonlinear and quantum light sources

Wafer-Scale Integration of Freestanding Photonic Devices with Color Centers in Silicon Carbide

Silicon carbide color centers for quantum applications

Wafer-scale 4H-silicon carbide-on-insulator (4H–SiCOI) platform for nonlinear integrated optical devices

Design and validation of a-SiC/SiN hybrid photonic platform for integrated quantum photonics

Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform

Chip-to-chip quantum teleportation and multi-photon entanglement in silicon

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Silicon Photonics for Quantum Communication

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Heterogeneous integration of spin–photon interfaces with a CMOS platform

Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence

Heterogeneous integration of solid state quantum systems with a foundry photonics platform

Silicon carbide for integrated photonics