Assessment of fluorescent-labeled bacteria for evaluation of in vivo uptake of bacteria (Vibrio spp.) by crustacean larvae.

S. Soto-Rodriguez,N. Simões,David Ackley Jones,Ana Iris Valdés Roque,B. Gómez‐Gil

DOI: https://doi.org/10.1016/S0167-7012(02)00149-5

IF: 2.622

Journal of Microbiological Methods

Abstract:

What problem does this paper attempt to address?

Soliton Microcombs in Integrated Chalcogenide Microresonators

Di Xia,Zelin Yang,Pingyang Zeng,Bin Zhang,Jiayue Wu,Zifu Wang,Jiaxin Zhao,Mingqi Gao,Yufei Huang,Jianteng Huang,Liyang Luo,Dong Liu,Shuixian Yang,Hairun Guo,Zhaohui Li

DOI: https://doi.org/10.48550/arXiv.2202.05992

2022-02-12

Optics

Abstract:Photonic integrated microcombs have enabled advanced applications in optical communication, microwave synthesis, and optical metrology, which in nature unveil an optical dissipative soliton pattern under cavity-enhanced nonlinear processes. The most decisive factor of microcombs lies in the photonic material platforms, where materials with high nonlinearity and in capacity of high-quality chip integration are highly demanded. In this work, we present a home-developed chalcogenide glasses-Ge25Sb10S65 (GeSbS) for the nonlinear photonic integration and for the dissipative soliton microcomb generation. Compared with the current integrated nonlinear platforms, the GeSbS features wider transparency from the visible to 11 um region, stronger nonlinearity, and lower thermo-refractive coefficient, and is CMOS compatible in fabrication. In this platform, we achieve chip-integrated optical microresonators with a quality (Q) factor above 2 x 10^6, and carry out lithographically controlled dispersion engineering. In particular, we demonstrate that both a bright soliton-based microcomb and a dark-pulsed comb are generated in a single microresonator, in its separated fundamental polarized mode families under different dispersion regimes. The overall pumping power is on the ten-milliwatt level, determined by both the high Q-factor and the high material nonlinearity of the microresonator. Our results may contribute to the field of nonlinear photonics with an alternative material platform for highly compact and high-intensity nonlinear interactions, while on the application aspect, contribute to the development of soliton microcombs at low operation power, which is potentially required for monolithically integrated optical frequency combs.
Laser Soliton Microcombs Heterogeneously Integrated on Silicon

Chao Xiang,Junqiu Liu,Joel Guo,Lin Chang,Rui Ning Wang,Wenle Weng,Jonathan Peters,Weiqiang Xie,Zeyu Zhang,Johann Riemensberger,Jennifer Selvidge,Tobias J. Kippenberg,John E. Bowers

DOI: https://doi.org/10.1126/science.abh2076

IF: 56.9

2021-01-01

Science

Abstract:Silicon photonics enables wafer-scale integration of optical functionalities on chip. Silicon-based laser frequency combs can provide integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent light detection and ranging, or photonics-assisted signal processing. We report heterogeneously integrated laser soliton microcombs combining both indium phospide/silicon (InP/Si) semiconductor lasers and ultralow-loss silicon nitride (Si3N4) microresonators on a monolithic silicon substrate. Thousands of devices can be produced from a single wafer by using complementary metal-oxide-semiconductor-compatible techniques. With on-chip electrical control of the laser-microresonator relative optical phase, these devices can output single-soliton microcombs with a 100-gigahertz repetition rate. Furthermore, we observe laser frequency noise reduction due to self-injection locking of the InP/Si laser to the Si3N4 microresonator. Our approach provides a route for large-volume, low-cost manufacturing of narrow-linewidth, chip-based frequency combs for next-generation high-capacity transceivers, data centers, space and mobile platforms.
Laser soliton microcombs on silicon

Chao Xiang,Junqiu Liu,Joel Guo,Lin Chang,Rui Ning Wang,Wenle Weng,Jonathan Peters,Weiqiang Xie,Zeyu Zhang,Johann Riemensberger,Jennifer Selvidge,Tobias J. Kippenberg,John E. Bowers

DOI: https://doi.org/10.48550/arXiv.2103.02725

2021-03-03

Optics

Abstract:Silicon photonics enables wafer-scale integration of optical functionalities on chip. A silicon-based laser frequency combs could significantly expand the applications of silicon photonics, by providing integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent LiDAR, or photonics-assisted signal processing. Here, we report on heterogeneously integrated laser soliton microcombs combining both InP/Si semiconductor lasers and ultralow-loss silicon nitride microresonators on monolithic silicon substrate. Thousands of devices are produced from a single wafer using standard CMOS techniques. Using on-chip electrical control of the microcomb-laser relative optical phase, these devices can output single-soliton microcombs with 100 GHz repetition rate. Our approach paves the way for large-volume, low-cost manufacturing of chip-based frequency combs for next-generation high-capacity transceivers, datacenters, space and mobile platforms.
An integrated 3C-silicon carbide-on-insulator photonic platform for nonlinear and quantum light sources

Jiayang Li,Qianni Zhang,Jiantao Wang,Andrew W. Poon

DOI: https://doi.org/10.1038/s42005-024-01620-x

2024-04-12

Communications Physics

Abstract:Silicon carbide (SiC) polytypes are emerging for integrated nonlinear and quantum photonics due to their wide-bandgap energies, second-order optic nonlinearity and process compatibility with complementary metal-oxide-semiconductor technologies. Among polytypes, 3C-SiC is the only one epitaxially grown on wafer-scale silicon substrates. However, on-chip nonlinear and quantum light sources leveraging the second-order nonlinearity of 3C-SiC have not been reported to our knowledge. Here, we design and fabricate an elliptical microring on 3C-SiC. We demonstrate a nonlinear light source with a second-harmonic generation efficiency of and difference-frequency generation with a signal-idler bandwidth of 97 nm. We demonstrate a spontaneous parametric down-conversion source with a photon-pair generation rate of 4.8 MHz and a coincidence-to-accidental ratio of . We measure a low heralded single-photon second-order coherence . We observe time-bin entanglement with a visibility of using this source. Our work paves a way toward SiC-based on-chip nonlinear and quantum photonic circuits.

physics, multidisciplinary
4H–SiC microring resonators—Opportunities for nonlinear integrated optics

Adnan Ali Afridi,Yaoqin Lu,Xiaodong Shi,Ruixuan Wang,Jingwei Li,Qing Li,Haiyan Ou

DOI: https://doi.org/10.1063/5.0198517

IF: 4

2024-04-22

Applied Physics Letters

Abstract:Silicon carbide, a wide bandgap semiconductor material platform, has emerged as an exceptional material for nonlinear integrated photonics. Among the different poly-structures, 4H-silicon carbide-on-insulator stacks show promising results to their low loss, which are crucial for commercial applications like communication, metrology, and spectroscopy. High Q-values and low-loss microring resonators are imperative for miniaturization and photonic integration in these applications. This Perspective emphasizes recent advancements in enhancing the quality factor of microresonators based on 4H-silicon carbide, as well as the strides made in experimental results of third-order nonlinearities. Furthermore, this Letter addresses and outlines the prospects of integrating 4H-silicon carbide microring resonators into frequency comb technologies and potential applications.

physics, applied
Soliton frequency comb generation in CMOS-compatible silicon nitride microresonators

Yaozu Xie,Jiaqi Li,Yanfeng Zhang,Zeru Wu,Shihao Zeng,Shuqing Lin,Zhaoyang Wu,Wenchao Zhou,Yujie Chen,Siyuan Yu

DOI: https://doi.org/10.1364/PRJ.454816

IF: 7.6

2022-05-03

Photonics Research

Abstract:The monolithic integration of soliton microcomb devices with active photonic components and high-frequency electronics is highly desirable for practical applications. Among many materials, silicon nitride ( SiNx ) waveguide layers prepared by low-pressure chemical vapor deposition (LPCVD) have been the main platform for on-chip optical frequency comb generation. However, the high temperatures involved in LPCVD render it incompatible as a back-end process with complementary metal oxide semiconductor (CMOS) or active III-V compound semiconductor fabrication flows. We report the generation of coherent soliton frequency combs in micro-ring resonators fabricated in deuterated silicon nitride ( SiNx:D ) waveguides with a loss of 0.09 dB/cm. Deposited at 270°C by an inductance-coupled plasma chemical vapor deposition (ICP-CVD) process, the material preparation and fabrication flow are fully CMOS-compatible. These results enable the integration of silicon-nitride-based optical combs and photonic integrated circuits (PICs) on prefabricated CMOS and/or III-V substrates, therefore marking a major step forward in SiNx photonic technologies. © 2022 Chinese Laser Press

optics
Silicon carbide soliton microcomb generation for narrow-grid optical communications

Jingwei Li,Ruixuan Wang,Haipeng Zheng,Zhensheng Jia,Qing Li

2024-02-29

Abstract:A soliton microcomb can play a crucial role in narrow-grid optical communications by replacing many independently operated lasers in wavelength-division multiplexing systems. In this work, we designed and demonstrated power-efficient soliton microcombs with 100-GHz free spectral range in an integrated 4H-SiC platform for the first time. The combination of enabling technologies, including efficient fiber coupling (3 dB insertion loss), high-quality-factor microrings (intrinsic quality factors up to 5.7 million), and the employment of the Raman effect for adiabatic accessing of the soliton state, has enabled the demonstration of soliton pump power as low as 6 mW while supporting comb powers above -20 dBm per line near the pump wavelength.

Optics
Wafer-scale 4H-silicon carbide-on-insulator (4H–SiCOI) platform for nonlinear integrated optical devices

Ailun Yi,Yi Zheng,Hao Huang,Jiajie Lin,Youquan Yan,Tiangui You,Kai Huang,Shibin Zhang,Chen Shen,Min Zhou,Wei Huang,Jiaxiang Zhang,Shengqiang Zhou,Haiyan Ou,Xin Ou

DOI: https://doi.org/10.1016/j.optmat.2020.109990

IF: 3.754

2020-09-01

Optical Materials

Abstract:<p>4H-silicon carbide-on-insulator (4H–SiCOI) serves as a novel and high efficient integration platform for nonlinear optics and quantum photonics. The realization of wafer-scale fabrication of single-crystalline semi-insulating 4H–SiC film on Si (100) substrate using the ion-cutting and layer transferring technique was demonstrated in this work. The thermodynamics of 4H–SiC surface blistering is investigated via observing the blistering phenomenon with a series of implanted fluences and annealing temperatures. Surface tomography and the depth dependent film quality of the 4H–SiC have been extensively studied by employing scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Moreover, X-ray diffraction (XRD) was carried out and the diffraction spectrum reveals a narrow peak with a full width at half maximum (FWHM) of 75.6 arcsec, indicating a good maintenance of the single-crystalline phase for the prepared thin film of 4H–SiC as compared to its bulk counterpart. With the single-crystalline 4H–SiCOI, we have successfully fabricated a micro-ring resonator with a quality factor as high as 6.6 × 10<sup>4</sup>. The reported 4H–SiCOI wafer provides a feasible monolithic platform for integrated photonic applications.</p>

materials science, multidisciplinary,optics
Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

Christian Lafforgue,Samuel Serna,Sylvain Guerber,Hongtao Lin,Joan Manel Ramirez,Guillaume Marcaud,Carlos Alonso-Ramos,Xavier Le Roux,Kathleen A. Richardson,Nicolas Dubreuil,Delphine Marris-Morini,Juejun Hu,Frédéric Boeuf,Sébastien Cremer,Stéphane Monfray,Eric Cassan,Laurent Vivien

DOI: https://doi.org/10.1364/oedi.2019.ow1c.2

2019-01-01

Abstract:Integrated photonics has for several years included in its panoply the development of functions based on third-order non-linear optical phenomena, from the generation of supercontinuum or frequency comb sources to metrology or spectroscopy on chip applications. This natural evolution, after the development of high-speed transceivers in the last few years, particularly in silicon photonics, is based on a number of compromises and still has to solve problems, particularly concerning the integration of nonlinear materials on silicon and their exploitation. The work we present addresses two directions. The first is oriented towards the development of a supercontinuum source using Nitrogen-rich photonic circuits from an industrial CMOS platform, while the second aims at the development of hybrid highly nonlinear waveguides significantly reducing the impact of twophoton absorption in the telecom window around 1,55μm by exploiting silicon slot waveguides infiltrated by chalcogenide glasses (As2S3).
Fabrication of the High-Q Si 3 N 4 Microresonators for Soliton Microcombs

Shuai Wan,Rui Niu,Jin-Lan Peng,Jin Li,Guang-Can Guo,Chang-Ling Zou,Chun-Hua Dong

DOI: https://doi.org/10.3788/col202220.032201

IF: 2.56

2022-01-01

Chinese Optics Letters

Abstract:The microresonator-based soliton microcomb has shown a promising future in many applications. In this work, we report the fabrication of high quality [Q) Si 3 N 4 microring resonators for soliton microcomb generation. By developing the fabrication process with crack isolation trenches and annealing, we can deposit thick stoichiometric Si 3 N 4 film of 800 nm without cracks in the central area. The highest intrinsic Q of the Si 3 N 4 microring obtained in our experiments is about 6 × 10 6 ,corresponding to a propagation loss as low as 0.058 dBm/cm. With such a high Q film, we fabricate microrings with the anomalous dispersion and demonstrate the generation of soliton microcombs with 100 mW on-chip pump power, with an optical parametric oscillation threshold of only 13.4 mW. Our Si 3 N 4 integrated chip provides an ideal platform for researches and applications of nonlinear photonics and integrated photonics.
4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics

Daniil M. Lukin,Constantin Dory,Melissa A. Guidry,Ki Youl Yang,Sattwik Deb Mishra,Rahul Trivedi,Marina Radulaski,Shuo Sun,Dries Vercruysse,Geun Ho Ahn,Jelena Vučković

DOI: https://doi.org/10.1038/s41566-019-0556-6

IF: 35

2019-12-02

Nature Photonics

Abstract:Optical quantum information processing will require highly efficient photonic circuits to connect quantum nodes on-chip and across long distances. This entails the efficient integration of optically addressable qubits into photonic circuits, as well as quantum frequency conversion to the telecommunications band. 4H-silicon carbide (4H-SiC) offers unique potential for on-chip quantum photonics, as it hosts a variety of promising colour centres and has a strong second-order optical nonlinearity. Here, we demonstrate within a single, monolithic platform the strong enhancement of emission from a colour centre and efficient optical frequency conversion. We develop a fabrication process for thin films of 4H-SiC, which are compatible with industry-standard, CMOS nanofabrication. This work provides a viable route towards industry-compatible, scalable colour-centre-based quantum technologies, including the monolithic generation and frequency conversion of quantum light on-chip.

optics,physics, applied
Optical parametric oscillation in silicon carbide nanophotonics

Melissa A. Guidry,Ki Youl Yang,Daniil M. Lukin,Ashot Markosyan,Joshua Yang,Martin M. Fejer,Jelena Vučković

DOI: https://doi.org/10.1364/OPTICA.394138

IF: 10.4

2020-09-04

Optica

Abstract:Silicon carbide (SiC) is rapidly emerging as a leading platform for the implementation of nonlinear and quantum photonics. Here, we find that commercial SiC, which hosts a variety of spin qubits, possesses low optical absorption that can enable SiC integrated photonics with quality factors exceeding . We fabricate multimode microring resonators with quality factors as high as 1.1 million, and observe low-threshold ( ) optical parametric oscillation using the fundamental mode as well as optical microcombs spanning 200 nm using a higher-order mode. Our demonstration is an essential milestone in the development of photonic devices that harness the unique optical properties of SiC, paving the way toward the monolithic integration of nonlinear photonics with spin-based quantum technologies. © 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

optics
An Ultrahigh-Q Microresonator on 4H-silicon-carbide-on-insulator Platform for Multiple Harmonics, Cascaded Raman Lasing and Kerr Comb Generations

Chengli Wang,Zhiwei Fang,Ailun Yi,Bingcheng Yang,Zhe Wang,Liping Zhou,Chen Shen,Yifan Zhu,Yuan Zhou,Rui Bao,Zhongxu Li,Yang Chen,Kai Huang,Jiaxiang Zhang,Ya Cheng,Xin Ou

DOI: https://doi.org/10.48550/arXiv.2105.02533

2021-05-06

Optics

Abstract:The realization of ultrahigh quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high Q resonators provide an extreme environment of storage of light to enable observations of many unconventional nonlinear optical phenomenon with high efficiencies. Here, we demonstrate an ultra-high Q factor (7.1*10^6) microresonator on the 4H-silicon-carbide-on-insulator (4H-SiCOI) platform in which both \c{hi}^(2) and \c{hi}^(3) nonlinear processes of high efficiencies have been generated. Broadband frequency conversions, including second-, third-, fourth-harmonic generation were observed. Cascaded Raman lasing was demonstrated in the SiC microresonator for the first time to the best of our knowledge. Broadband Kerr frequency combs covering from 1300 to 1700 nm were achieved using a dispersion-engineered SiC microresonator. Our demonstration is a significant milestone in the development of SiC photonic integrated devices.
III-Nitride nanophotonics for beyond-octave soliton generation and self-referencing

Xianwen Liu,Zheng Gong,Alexander W. Bruch,Joshua B. Surya,Juanjuan Lu,Hong X. Tang

DOI: https://doi.org/10.1038/s41467-021-25751-9

2020-12-25

Abstract:Frequency microcombs, successors to mode-locked laser and fiber combs, enable miniature rulers of light for applications including precision metrology, molecular fingerprinting, and exoplanet discoveries. To enable the frequency ruling function, microcombs must be stabilized by locking their carrier-envelop offset frequency. So far, the microcomb stabilization remains compounded by the elaborate optics external to the chip, thus evading its scaling benefit. To address this challenge, here we demonstrate a nanophotonic chip solution based on aluminum nitride thin films, which simultaneously offer optical Kerr nonlinearity for generating octave soliton combs and Pockels nonlinearity for enabling heterodyne detection of the offset frequency. The agile dispersion control of crystalline III-Nitride photonics permits high-fidelity generation of solitons with features including 1.5-octave comb span, dual dispersive waves, and sub-terahertz repetition rates down to 220 gigahertz. These attractive characteristics, aided by on-chip phase-matched aluminum nitride waveguides, allow the full determination of the offset frequency. Our proof-of-principle demonstration represents an important milestone towards fully-integrated self-locked microcombs for portable optical atomic clocks and frequency synthesizers.

Applied Physics,Optics
Superefficient microcombs at the wafer level

Marcello Girardi,Óskar B. Helgason,Carmen H. López Ortega,Israel Rebolledo-Salgado,Victor Torres-Company

2023-09-05

Abstract:Photonic integrated circuits utilize planar waveguides to process light on a chip, encompassing functions like generation, routing, modulation, and detection. Similar to the advancements in the electronics industry, photonics research is steadily transferring an expanding repertoire of functionalities onto integrated platforms. The combination of best-in-class materials at the wafer-level increases versatility and performance, suitable for large-scale markets, such as datacentre interconnects, lidar for autonomous driving or consumer health. These applications require mature integration platforms to sustain the production of millions of devices per year and provide efficient solutions in terms of power consumption and wavelength multiplicity for scalability. Chip-scale frequency combs offer massive wavelength parallelization, holding a transformative potential in photonic system integration, but efficient solutions have only been reported at the die level. Here, we demonstrate a silicon nitride technology on a 100 mm wafer that aids the performance requirements of soliton microcombs in terms of yield, spectral stability, and power efficiency. Soliton microcombs are reported with an average conversion efficiency exceeding 50%, featuring 100 lines at 100 GHz repetition rate. We further illustrate the enabling possibilities of the space multiplicity, i.e., the large wafer-level redundancy, for establishing new sensing applications, and show tri-comb interferometry for broadband phase-sensitive spectroscopy. Combined with heterogeneous integration of lasers, we envision a proliferation of high-performance photonic systems for applications in future navigation systems, data centre interconnects, and ranging.

Optics,Applied Physics
Geometry optimization for dark soliton combs in thin multimode silicon nitride microresonators

Yaojing Zhang,Shuangyou Zhang,Toby Bi,Pascal Del'Haye

DOI: https://doi.org/10.1364/OE.503637

2023-12-04

Abstract:Silicon nitride (Si3N4) has been well established as an ultralow-loss material for integrated photonics, particularly for the generation of dissipative Kerr soliton frequency combs, enabling various applications for optical metrology, biological imaging, and coherent telecommunications. Typically, bright soliton generation in Si3N4 devices requires thick (>600 nm) films to fulfill the condition of anomalous dispersion at telecom wavelengths. However, thick films of ultralow-loss Si3N4 (>400 nm) often suffer from high internal stress, leading to cracks. As an alternative approach, thin Si3N4 films (<400 nm) provide the advantage of one-step deposition and are widely applied for commercial use. Here, we provide insights into engineering an integrated Si3N4 structure that achieves optimal effective nonlinearity and maintains a compact footprint. A comparative analysis of Si3N4 resonators with varying waveguide thicknesses is conducted and reveals that a 400-nm thin Si3N4 film emerges as a promising solution that strikes a balance among the aforementioned criteria. Based on a commercially available 400-nm Si3N4 film, we experimentally demonstrate the generation of low-noise coherent dark pulses with a repetition rate of 25 GHz in a multimode Si3N4 resonator. The compact spiral-shaped resonator has a footprint of 0.28 mm2 with a high-quality factor of 4 × 106. Our demonstrated dark combs with mode spacings of tens of GHz have applications in microwave photonics, optical spectroscopy, and telecommunication systems.
Silicon-integrated nonlinear III-V photonics

Weiqiang Xie,Chao Xiang,Lin Chang,Warren Jin,Jonathan Peters,John E. Bowers

DOI: https://doi.org/10.1364/PRJ.446898

IF: 7.6

2022-02-03

Photonics Research

Abstract:Mainstream silicon photonic integrated circuits are based on compact and low-loss silicon-on-insulator (SOI) waveguide platforms. However, monolithic SOI-based photonics provides only a limited number of functional device types. Here, to extend the on-chip capabilities, we propose a general heterogeneous integration approach to embed highly nonlinear III-V (AlGaAs) photonics into the SOI platform. We develop low-loss AlGaAs-on-SOI photonic circuits with integrated Si waveguides and showcase sub-milliwatt-threshold ( ∼0.25 mW ) Kerr frequency comb generation in ultrahigh- Q AlGaAs microrings ( Q over 106 ) at the telecom bands. Our demonstration complements existing mature Si photonics technology with efficient nonlinear functionalities provided by III-V and propels conventional Si photonics into emerging nonlinear photonic applications towards fully chip-based nonlinear engines. © 2022 Chinese Laser Press

optics
Silicon carbide for integrated photonics

Ailun Yi,Chengli Wang,Liping Zhou,Yifan Zhu,Shibin Zhang,Tiangui You,Jiaxiang Zhang,Xin Ou

DOI: https://doi.org/10.1063/5.0079649

IF: 15

2022-09-02

Applied Physics Reviews

Abstract:Photonic integrated circuits (PICs) based on lithographically patterned waveguides provide a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a wide range of photonic technologies with desired complexity and stability. While the next generation of applications such as ultra-high speed optical transceivers, neuromorphic computing and terabit-scale communications demand further lower power consumption and higher operating frequency. Complementing the leading silicon-based material platforms, the third-generation semiconductor, silicon carbide (SiC), offers a significant opportunity toward the advanced development of PICs in terms of its broadest range of functionalities, including wide bandgap, high optical nonlinearities, high refractive index, controllable artificial spin defects and complementary metal oxide semiconductor-compatible fabrication process. The superior properties of SiC have enabled a plethora of nano-photonic explorations, such as waveguides, micro-cavities, nonlinear frequency converters and optically-active spin defects. This remarkable progress has prompted the rapid development of advanced SiC PICs for both classical and quantum applications. Here, we provide an overview of SiC-based integrated photonics, presenting the latest progress on investigating its basic optoelectronic properties, as well as the recent developments in the fabrication of several typical approaches for light confinement structures that form the basic building blocks for low-loss, multi-functional and industry-compatible integrated photonic platform. Moreover, recent works employing SiC as optically-readable spin hosts for quantum information applications are also summarized and highlighted. As a still-developing integrated photonic platform, prospects and challenges of utilizing SiC material platforms in the field of integrated photonics are also discussed.

physics, applied
Electrically pumped photonic integrated soliton microcomb

Arslan S. Raja,Andrey S. Voloshin,Hairun Guo,Sofya E. Agafonova,Junqiu Liu,Alexander S. Gorodnitskiy,Maxim Karpov,Nikolay G. Pavlov,Erwan Lucas,Ramzil R. Galiev,Artem E. Shitikov,John D. Jost,Michael L. Gorodetsky,Tobias J. Kippenberg

DOI: https://doi.org/10.1038/s41467-019-08498-2

2018-11-22

Abstract:Optical frequency combs have revolutionized frequency metrology and timekeeping, and can be used in a wide range of optical technologies. Advances are under way that allow dramatic miniaturization of optical frequency combs using Kerr nonlinear optical microresonators, where broadband and coherent optical frequency combs can be generated from a continuous wave laser. Such `microcombs', provide a broad bandwidth with low power consumption, unprecedented form factor, wafer scale fabrication compatibility. For future high volume applications, integration and electrical pumping of soliton microcombs is essential. To date, however, microcombs still rely on optical pumping by bulk external laser modules that provide the required coherence, frequency agility and power levels for soliton formation. Electrically-driven, chip-integrated microcombs are inhibited by the high threshold power for soliton formation, typically exceeding the power of integrated silicon based lasers, and the required frequency agility for soliton initiation. Recent advances in high-Q Si3N4 microresonators suggest that electrically driven soliton microcombs are possible. Here we demonstrate an electrically-driven, chip-integrated soliton microcomb by coupling an indium phosphide (III-V) multiple-longitudinal-mode laser diode chip to a high-Q Si3N4 photonic integrated microresonator. We observe that self-injection locking of the laser diode to the microresonator, which is accompanied by a x1000 fold narrowing of the laser linewidth, can simultaneously initiate the formation of dissipative Kerr solitons. By tuning the current, we observe a transition from modulation instability, breather solitons to single soliton states. The system requires less than 1 Watt of electrical power, operates at electronically-detectable sub-100 GHz mode spacing and can fit in a volume of ca. 1cm3.

Optics,Applied Physics
Heterogeneous integration of amorphous silicon carbide on thin film lithium niobate

Zizheng Li,Naresh Sharma,Bruno Lopez-Rodriguez,Roald van der Kolk,Thomas Scholte,Hugo Voncken,Jasper van der Boom,Simon Gröblacher,Iman Esmaeil Zadeh

2024-07-12

Abstract:In the past decade, lithium niobate (LiNbO3 or LN) photonics, thanks to its heat-free and fast electro-optical modulation, second-order non-linearities and low loss, has been extensively investigated. Despite numerous demonstrations of high-performance LN photonics, processing lithium niobate remains challenging and suffers from incompatibilities with standard complementary metal-oxide semiconductor (CMOS) fabrication lines, limiting its scalability. Silicon carbide (SiC) is an emerging material platform with a high refractive index, a large non-linear Kerr coefficient, and a promising candidate for heterogeneous integration with LN photonics. Current approaches of SiC/LN integration require transfer-bonding techniques, which are time-consuming, expensive, and lack precision in layer thickness. Here we show that amorphous silicon carbide (a-SiC), deposited using inductively coupled plasma enhanced chemical vapor deposition (ICPCVD) at low temperatures (< 165 C), can be conveniently integrated with LiNbO3 and processed to form high-performance photonics. Most importantly, the fabrication only involves a standard, silicon-compatible, reactive ion etching step and leaves the LiNbO3 intact, hence its compatibility with standard foundry processes. As a proof-of-principle, we fabricated waveguides and ring resonators on the developed a-SiC/LN platform and achieved intrinsic quality factors higher than 106,000 and resonance electro-optic tunability of 3.4 pm/V with 3 mm tuning length. We showcase the possibility of dense integration by fabricating and testing ring resonators with 40um radius without a noticeable loss penalty. Our platform offers a CMOS-compatible and scalable approach for implementation of future fast electro-optic modulators and reconfigurable photonic circuits as well as nonlinear processes which can benefit from involving both second and third-order nonlinearities.

Optics,Applied Physics

Assessment of fluorescent-labeled bacteria for evaluation of in vivo uptake of bacteria (Vibrio spp.) by crustacean larvae.

Soliton Microcombs in Integrated Chalcogenide Microresonators

Laser Soliton Microcombs Heterogeneously Integrated on Silicon

Laser soliton microcombs on silicon

An integrated 3C-silicon carbide-on-insulator photonic platform for nonlinear and quantum light sources

4H–SiC microring resonators—Opportunities for nonlinear integrated optics

Soliton frequency comb generation in CMOS-compatible silicon nitride microresonators

Silicon carbide soliton microcomb generation for narrow-grid optical communications

Wafer-scale 4H-silicon carbide-on-insulator (4H–SiCOI) platform for nonlinear integrated optical devices

Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

Fabrication of the High-Q Si 3 N 4 Microresonators for Soliton Microcombs

4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics

Optical parametric oscillation in silicon carbide nanophotonics

An Ultrahigh-Q Microresonator on 4H-silicon-carbide-on-insulator Platform for Multiple Harmonics, Cascaded Raman Lasing and Kerr Comb Generations

III-Nitride nanophotonics for beyond-octave soliton generation and self-referencing

Superefficient microcombs at the wafer level

Geometry optimization for dark soliton combs in thin multimode silicon nitride microresonators

Silicon-integrated nonlinear III-V photonics

Silicon carbide for integrated photonics

Electrically pumped photonic integrated soliton microcomb

Heterogeneous integration of amorphous silicon carbide on thin film lithium niobate