Abstract:Abstract Silicon carbide has recently surged as an alternative material for scalable and integrated quantum photonics, as it is a host for naturally occurring color centers within its bandgap, emitting from the UV to the IR even at telecom wavelength. Some of these color centers have been proved to be characterized by quantum properties associated with their single-photon emission and their coherent spin state control, which make them ideal for quantum technology, such as quantum communication, computation, quantum sensing, metrology and can constitute the elements of future quantum networks. Due to its outstanding electrical, mechanical, and optical properties which extend to optical nonlinear properties, silicon carbide can also supply a more amenable platform for photonics devices with respect to other wide bandgap semiconductors, being already an unsurpassed material for high power microelectronics. In this review, we will summarize the current findings on this material color centers quantum properties such as quantum emission via optical and electrical excitation, optical spin polarization and coherent spin control and manipulation. Their fabrication methods are also summarized, showing the need for on-demand and nanometric control of the color centers fabrication location in the material. Their current applications in single-photon sources, quantum sensing of strain, magnetic and electric fields, spin-photon interface are also described. Finally, the efforts in the integration of these color centers in photonics devices and their fabrication challenges are described.

Triangular Cross-Section Beam Splitters in Silicon Carbide for Quantum Information Processing

Triangular cross-section beam splitters in silicon carbide for quantum information processing

Quantum photonics in triangular-cross-section nanodevices in silicon carbide

Triangular cross-section grating couplers for integrated quantum nanophotonic hardware in silicon carbide

Utilizing photonic band gap in triangular silicon carbide structures for efficient quantum nanophotonic hardware

Quantum Information Processing With Integrated Silicon Carbide Photonics

Triangular Quantum Photonic Devices with Integrated Detectors in Silicon Carbide

High-Performance Polarization-Independent Beam Splitters and MZI in Silicon Carbide Integrated Platforms for Single-Photon Manipulation

Wafer-Scale Integration of Freestanding Photonic Devices with Color Centers in Silicon Carbide

Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

Direct-binary-search-optimized Compact Silicon-Based Polarization Beam Splitter Using a Pixelated Directional Coupler

Quantum Photonics Incorporating Color Centers in Silicon Carbide and Diamond

Ultracompact multiway beam splitters using multiple coupled photonic crystal waveguides

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Ultracompact 2 $\,\times\,$ 2 Photonic Crystal Waveguide Power Splitter Based on Self-Imaging Effect Realized by Asymmetric Interference

4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics

Compact Low-Birefringence Polarization Beam Splitter Using Vertical-Dual-slot Waveguides in Silicon Carbide Integrated Platforms

Design and Simulation of Broadband Beam Splitter on a Silicon Nitride Platform for Optical Coherence Tomography

Silicon carbide color centers for quantum applications

Small Admixture of Nonadiabaticity Facilitating Topologically Protected Splitters and Routers Via Optimizing Coupling Engineering