Abstract:Two-dimensional (2D) materials have emerged as promising platforms for quantum technologies and optoelectronics, with defects playing a crucial role in their properties. We present a comprehensive density functional theory study of silicon and carbon vacancies in monolayer silicon carbide (1L-SiC), a wide-bandgap 2D semiconductor with potential for room-temperature quantum applications. Using PBE, SCAN, r$^2$SCAN, and HSE06 functionals, we reveal distinct characteristics between Si and C vacancies. Formation energies and charge transition levels show strong functional dependence, with HSE06 consistently predicting higher values and deeper transition levels compared to PBE calculations. Electronic structure analysis demonstrates contrasting behavior: silicon vacancies create highly localized states with strong spin polarization, while carbon vacancies produce more dispersed states with weaker magnetic properties. Vacancy migration studies reveal significantly lower barriers for silicon vacancies compared to carbon vacancies, indicating higher mobility for Si vacancies at moderate temperatures. Optical properties, calculated using PBE-DFPT, show distinct charge-state dependent absorption in the far-infrared region, with positively charged states of both vacancy types demonstrating the strongest response. The complementary characteristics of Si and C vacancies - localized versus dispersed states, different magnetic properties, and distinct optical responses - suggest possibilities for defect engineering in quantum and optoelectronic applications. Our results highlight the critical importance of advanced functionals in accurately describing defect properties and provide a comprehensive framework for understanding vacancy behavior in 2D materials.

Charge state and entropic effects affecting the formation and dynamics of divacancies in 3C-SiC

First-principles Study on Mono-Vacancy Self Diffusion and Recovery in Tungsten Crystal

Theory of the divacancy in 4H-SiC: Impact of Jahn-Teller effect on optical properties

First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC

Identifying the charge states of carbon vacancies in 4H-SiC by ab initio metadynamics

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Excitation properties of the divacancy in 4H-SiC

Optical Charge State Manipulation of Divacancy Spins in Silicon Carbide under Resonant Excitation

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Dipolar spin relaxation of divacancy qubits in silicon carbide

Engineering the formation of spin-defects from first principles

Vacancy-Induced Quantum Properties in 2D Silicon Carbide: Atomistic insights from semi-local and hybrid DFT calculations

Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation

Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide

Assessing the potential of perfect screw dislocations in SiC for solid-state quantum technologies

Optical charge state control of spin defects in 4H-SiC

Molecular dynamics simulations of extended defects and their evolution in 3C–SiC by different potentials

The influence of intrinsic point defects on the electronic band structures and swelling behaviors of 4H-SiC

First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC

Vacancy-related color centers in two-dimensional silicon carbide monolayers

First principles study of vacancies in Si