Abstract:Two-dimensional (2D) materials have emerged as promising platforms for quantum technologies and optoelectronics, with defects playing a crucial role in their properties. We present a comprehensive density functional theory study of silicon and carbon vacancies in monolayer silicon carbide (1L-SiC), a wide-bandgap 2D semiconductor with potential for room-temperature quantum applications. Using PBE, SCAN, r$^2$SCAN, and HSE06 functionals, we reveal distinct characteristics between Si and C vacancies. Formation energies and charge transition levels show strong functional dependence, with HSE06 consistently predicting higher values and deeper transition levels compared to PBE calculations. Electronic structure analysis demonstrates contrasting behavior: silicon vacancies create highly localized states with strong spin polarization, while carbon vacancies produce more dispersed states with weaker magnetic properties. Vacancy migration studies reveal significantly lower barriers for silicon vacancies compared to carbon vacancies, indicating higher mobility for Si vacancies at moderate temperatures. Optical properties, calculated using PBE-DFPT, show distinct charge-state dependent absorption in the far-infrared region, with positively charged states of both vacancy types demonstrating the strongest response. The complementary characteristics of Si and C vacancies - localized versus dispersed states, different magnetic properties, and distinct optical responses - suggest possibilities for defect engineering in quantum and optoelectronic applications. Our results highlight the critical importance of advanced functionals in accurately describing defect properties and provide a comprehensive framework for understanding vacancy behavior in 2D materials.

First principles study of vacancies in Si

Ab Initio Calculation of Vacancies and Interstitials in NiSi 2

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Vacancy-Induced Quantum Properties in 2D Silicon Carbide: Atomistic insights from semi-local and hybrid DFT calculations

Ab Initio Calculation of Silicon Monovacancy Defect in Amorphous-Sio2/si Interface

Electronic Structure of Vacancy-Phosphorus Impurity Complexes in Silicon

First-principles Study of Phosphorus Diffusion in Silicon: Interstitial- and Vacancy-Mediated Diffusion Mechanisms

First principles study of oxygen vacancy defects in amorphous SiO2

Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes

Insight into the Vacancy Effects on Mechanical and Electronic Properties of V5Si3 Silicides from First-Principles Calculations.

Investigation and Calculation of Positron Lifetimes of Mono-Vacancies in Crystals

Effect of Vacancy Charge State on Positron Annihilation in Silicon

First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC

Theoretical Calculations of Hyperfine Interactions of the Jahn-Teller Distorted Single Vacancy in Silicon

Structure and Effects of Vacancies in Σ3 (112) Grain Boundaries in Si

Adatom Vacancies on the Si(111)-(7×7) Surface

Electronic-Structure of Hydrogen-Vacancy Complexes in Crystalline Silicon - A Theoretical-Study

Identification of Vacancy-Oxygen Complexes in Si by Coincidence Doppler Broadening of Positron Annihilation Radiation and First-Principles Calculations

Ab initio study of electronic properties of CoSi2 and NiSi 2 in the fluorite structure

First Principles Study of Vacancy-Solute Complexes in Vanadium

Vacancy-related color centers in twodimensional silicon carbide monolayers