Abstract:Monocrystalline silicon is an important substrate or base material for manufacturing integrated circuit chips, mirrors, etc. However, it is a typical hard and brittle material, which is very prone to produce defects during processing. This paper investigates the electronic structure and optical properties of sphalerite monocrystalline silicon with vacancy concentrations of 1.5625%, 3.125%, 4.6875%, and 6.25% using the first principles method based on density functional theory. The results demonstrate that the introduction of impurities results in the formation of impurity bands (IB) within the band structure, thereby facilitating electronic transitions. However, vacancy defects do not alter the properties of monocrystalline silicon as an indirect semiconductor. Regarding optical properties, an increase in defect concentration leads to a decrease in the macroscopic symmetry of the system, resulting in noticeable anisotropy in each property. Also found that the main spectral peaks of the defect system are red-shifted, and the vacancy defects introduce new peaks in the near-infrared region and the visible region with increasing intensity, but the peaks in the ultraviolet region gradually decrease with the increase of the defect concentration. The refractive index peak gradually decreases with the increase of defect concentration, and the calculated average refractive index is around 1.2. In the high-energy region, the refractive index takes a very small value, and the reflection of electromagnetic waves from the doped system is also weak at this time, which indicates that the system has a high transmittance property. Importantly, there is a higher intensity of energy loss at photon energies around 16.5 eV. Consequently, these calculations are deemed valuable for advancing research and applications involving monocrystalline silicon optical mirrors.

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