Abstract:Monocrystalline silicon is an important substrate or base material for manufacturing integrated circuit chips, mirrors, etc. However, it is a typical hard and brittle material, which is very prone to produce defects during processing. This paper investigates the electronic structure and optical properties of sphalerite monocrystalline silicon with vacancy concentrations of 1.5625%, 3.125%, 4.6875%, and 6.25% using the first principles method based on density functional theory. The results demonstrate that the introduction of impurities results in the formation of impurity bands (IB) within the band structure, thereby facilitating electronic transitions. However, vacancy defects do not alter the properties of monocrystalline silicon as an indirect semiconductor. Regarding optical properties, an increase in defect concentration leads to a decrease in the macroscopic symmetry of the system, resulting in noticeable anisotropy in each property. Also found that the main spectral peaks of the defect system are red-shifted, and the vacancy defects introduce new peaks in the near-infrared region and the visible region with increasing intensity, but the peaks in the ultraviolet region gradually decrease with the increase of the defect concentration. The refractive index peak gradually decreases with the increase of defect concentration, and the calculated average refractive index is around 1.2. In the high-energy region, the refractive index takes a very small value, and the reflection of electromagnetic waves from the doped system is also weak at this time, which indicates that the system has a high transmittance property. Importantly, there is a higher intensity of energy loss at photon energies around 16.5 eV. Consequently, these calculations are deemed valuable for advancing research and applications involving monocrystalline silicon optical mirrors.

Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes

First-principles Study on Mono-Vacancy Self Diffusion and Recovery in Tungsten Crystal

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Fast Diffusion Mechanism of Silicon Tri-interstitial Defects

Self Diffusion in Silicon Using the Ackland Potential

The influence of intrinsic point defects on the electronic band structures and swelling behaviors of 4H-SiC

On the solubility and diffusivity of the intrinsic point defects in germanium

First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC

Comparative chemistry of diffuse clouds III: sulfur-bearing molecules

First principles study of vacancies in Si

Atomic Simulations of Packing Structures, Local Stress and Mechanical Properties for One Silicon Lattice with Single Vacancy on Heating

Electronic-Structure of Hydrogen-Vacancy Complexes in Crystalline Silicon - A Theoretical-Study

Energetics of intrinsic point defects in ZrSiO$_4$

A density functional theory study of the atomic structure, formation energy, and vibrational properties of nitrogen-vacancy-oxygen defects in silicon

Formation energies of silicon self-interstitials using periodic coupled cluster theory

Ab Initio Calculation of Vacancies and Interstitials in NiSi 2

Computational analysis of electronic structure and optical properties of monocrystalline silicon-vacancy defect system based on density functional theory

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution

Fluorine in Silicon: Diffusion, Trapping, and Precipitation

Diffusivity of the double negatively charged mono-vacancy in silicon