Abstract:The negatively charged silicon monovacancy $V_{Si}^-$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal cavities (PCCs) can augment the optical emission of the $V_{Si}^-$, yet fine-tuning the defect-cavity interaction remains challenging. We report on two post-fabrication processes that result in enhancement of the $V_1^{'}$ optical emission from our 1-dimensional PCCs, indicating improved coupling between the ensemble of silicon vacancies and the PCC. One process involves below bandgap illumination at 785 nm and 532 nm wavelengths and above bandgap illumination at 325 nm, carried out at times ranging from a few minutes to several hours. The other process is thermal annealing at $100^o C$, carried out over 20 minutes. Every process except above bandgap irradiation improves the defect-cavity coupling, manifested in augmented Purcell factor enhancement of the $V_1^{'}$ zero phonon line at 77K. The below bandgap laser process is attributed to a modification of charge states, changing the relative ratio of $V_{Si}^0$ (dark state) to $V_{Si}^-$ (bright state), while the thermal annealing process may be explained by diffusion of carbon interstitials, $C_i$, that subsequently recombine with other defects to create additional $V_{Si}^-$s. Above bandgap radiation is proposed to initially convert $V_{Si}^{0}$ to $V_{Si}^-$, but also may lead to diffusion of $V_{Si}^-$ away from the probe area, resulting in an irreversible reduction of the optical signal. Observations of the PCC spectra allow insights into defect modifications and interactions within a controlled, designated volume and indicate pathways to improve defect-cavity interactions.

Clustering of vacancy defects in high-purity semi-insulating SiC

Vacancy-related color centers in twodimensional silicon carbide monolayers

Vacancy-related color centers in two-dimensional silicon carbide monolayers

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Vacancy-Induced Quantum Properties in 2D Silicon Carbide: Atomistic insights from semi-local and hybrid DFT calculations

The Chlorine Vacancy in 4H-SiC: An NV-like Defect With Telecom Emission

Characterization and formation of NV centers in 3C, 4H and 6H SiC: an \emph{ab initio} study

Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC

Native point defects and carbon clusters in 4H-SiC: A hybrid functional study

Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing

Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon

Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC

First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC

First principles study of vacancies in Si

On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

The positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC

First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC

Identification of Si-vacancy related room temperature qubits in 4H silicon carbide

Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes

First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC

High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide