Abstract:Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC devices are extremely small, even after irradiation to very high fluences, enabling operation without cooling and at high temperatures. This study investigates the effect of neutron irradiation on 50$\mu$m p-n 4H-SiC diodes using current-voltage, capacitance-voltage, and charge collection efficiency (CCE) measurements up to neutron fluences of $1\times 10^{16}$ n$_{\text{eq}}$/cm$^2$. The leakage currents of the investigated devices remained extremely small, below 10 pA at 1.1 kV reverse bias. In the forward bias, a remarkable drop of the current was observed, which was attributed to an increased epi resistivity due to compensation of the epi layer doping by deep-level defects. The CCE was evaluated for alpha particles from a radioactive source, a 62.4 MeV proton beam at the MedAustron ion therapy center and using UV-TCT. The charge collection efficiency in reverse bias was shown to scale directly with the 1 MeV equivalent fluence $\Phi_{\text{eq}}$ as $\text{CCE} \propto \Phi_{\text{eq}}^{-0.63\pm0.01}$. A CCE better than 50% was able to be obtained for fluences up to $1 \times 10^{15}$ n$_{\text{eq}}$/cm$^2$. Because of the low currents in the forward direction, particle detection was also possible in forward bias, where the CCE was found to be increased relative to reverse bias. Furthermore, a significant dependency on the amount of injected charge was observed, with the CCE surpassing 100% in alpha and UV-TCT measurements, requiring further systematic investigation.

Effects of proton radiation on field limiting ring edge terminations in 4H–SiC junction barrier Schottky diodes

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

Investigation on Electrical Performance Degradation Mechanism of β-Ga2O3 Schottky Barrier Diodes Under 3 MeV Proton Radiation

X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Proton Radiation Effects on High-Speed Silicon Mach-Zehnder Modulators for Space Application

Study of the Leakage Current Degradation Based on Stacking Faults Expansion in Irradiated SiC Junction Barrier Schottky Diodes

Electron Radiation Effects on the 4H-Sic PiN Diodes Characteristics: an Insight from Point Defects to Electrical Degradation

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Neutron Radiation induced Effects in 4H-SiC PiN Diodes

Impact of proton-induced total ionizing dose effects on electrical characteristics and safe operating area of trench field-stop IGBT devices

Radiation effects of high-fluence reactor neutron on Ni/ β -Ga2O3 Schottky barrier diodes

The effect of proton irradiation on the characteristics of InP/InGaAs heterojunction

The Total-Dose-effects of Gamma and Proton Irradiations on High-Voltage Silicon–germanium Heterojunction Bipolar Transistors

A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes

Analysis of Floating Limiting Rings Termination Under Repetitive Avalanche Current Stress for 4H-SiC JBS Rectifiers

Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation

Comparison of the Effects of Continuous and Intermittent Electron Irradiation on Commercial 4H-Sic Schottky Barrier Diodes