Abstract:The root mean square (rms) surface roughness extracted from atomic force microscopy is widely employed to complement the characterisation of ion implantation processes in 4H-SiC. It is known that the protection of a carbon film eliminates or mitigates roughening of the SiC surface during postimplantation annealing. This study, based on a rich original data collection of Al+ ion implanted 4H-SiC samples, allows for a quantitative description of the surface morphology as a function of the annealing temperature and time and of the Al implanted concentration. With increasing thermal budget, the evolution from flat, to blurred with ripples, granular, and finally jagged surface, results in a monotonous increase in the root mean square roughness. Additional information is given by the trends of the roughness exponent and of the correlation length, extracted from the height-height correlation function, which account for the surface evolution below 1700°C and for the effect of the Al implanted concentration on the ripple size, respectively. A combination of low roughness parameter and high correlation length identify the transition from ripples to jagged morphology. LAY DESCRIPTION: Selective area doping is a key step in the fabrication of hexagonal Silicon Carbide (4H-SiC) power electronic devices. It is achieved by ion implantation followed by a high temperature postimplantation annealing to restore the lattice and electrically activate the dopants. Aluminium, the preferred p-type dopant, is electrically activated at temperature ranging between 1500°C and 2000°C. The time required to complete the activation process is longer the lower the annealing temperature, spanning between some minutes and hundreds of hours. During annealing, 4H-SiC wafers are encapsulated by a temperature-resistant carbon layer (C-cap) in order to avoid step bunching and reduce surface roughening. Nevertheless, surface modifications can occur at high temperature. For this reason, the characterisations of 4H-SiC doping processes report not only the electrical activation of the dopants, but also the root mean square surface roughness obtained at the end of the process. However, rms values can be scattered because technological parameters such as the heating system and the way to deposit and remove the C-cap can affect the final result as well as the process parameters. Furthermore, the C-cap resistance to long annealing has been proven only by electrical measurements, but the surface morphology has never been observed. This work presents a quantitative characterisation of the surface morphology of Al implanted 4H-SiC as a function of the annealing temperature, time and of the Al implanted concentration, independent of the heating system and of the C-cap technology. The produced sample collection allowed to correlate characteristic surface features with the corresponding quantities extracted from image analysis that can be more sensitive to process parameters than the sole rms. These findings can be used to enrich process optimisation tools.

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Formation of ohmic contacts on heavily Al + -implanted p-type SiC without alloying process

Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods

Searching for Device Processing Compatible Ohmic Contacts to Implanted P-Type 4H-Sic

4H-SiC surface morphology after Al ion implantation and annealing with C-cap

Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC

Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiC

The Ohmic Contact of 4H-Sic Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing

Insights into the effects of Al-ion implantation temperature on material properties of 4H-SiC

Fabrication of Ohmic Contact on the Carbon-Terminated Surface of N-Type Silicon Carbide

How to Accurately Determine the Ohmic Contact Properties on n-Type 4H-SiC

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

A method to improve the specific contact resistance of 4H-SiC Ohmic contact through increasing the ratio of sp 2 -carbon

Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing

4H-SiC Ohmic Contact and Measure Technology

Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

Effects of annealing temperature on the structure and electrical properties of tungsten contacts to n-type silicon carbide

Si-implantation for Low Ohmic Contact Resistances in RF GaN HEMTs

Al-implantation induced damage in 4H-SiC