Abstract:Tungsten and WSi2 have been examined as contact barriers between aluminium and n+ - or p+ -Si. The specific contact resistivity and diode leakage current were evaluated after heat treatment at different temperatures. Rutherford backscattering spectrometry measurements, X-ray diffraction analysis, scanning electron microscopy and sheet resistance measurements were performed to study the thermal stabilities of the Al/W/Si and Al/WSi2/Si systems. The contact resistivities of chemically vapour deposited tungsten and WSi2 to n+ -Si with a surface concentration of 7.5 × 1019 cm-3 were 8 × 10-7 Ωcm2 and 9 × 10-7 Ωcm2 respectively. To p+ -Si with a surface concentration of 2.6 × 1019 cm-3, they were 5 × 10-6 and 1 × 10-6 Ωcm2. Diffusion of aluminium was revealed to occur above 475°C in the case of tungsten and at 475°C in the case of WSi2. The void formation in silicon substrates was observed after heat treatment at 500°C for the Al/WSi2/Si system. The increase in leakage current for the Al/W/Si and Al/WSi2/Si structures is related to the onset of Si-Al interpenetration. Alloy formation was observed at 500°C for tungsten contacts whereas W-Al or other alloys were not detected up to 600°C for the WSi2 contact.

Searching for Device Processing Compatible Ohmic Contacts to Implanted P-Type 4H-Sic

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Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

4H-SiC Ohmic Contact and Measure Technology

Ti/Al/Pt/Au and Al Ohmic Contacts on Si-Substrated Gan

TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ Cm2 Contact Resistivities to P-Sige

Comparison of Ti/Au, Ni/Au, and Sc/Au ohmic contact metal stacks on (Al0.18Ga0.82)2O3

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Ohmic Contact and Interfacial Reaction of Ti/Al/Pt/Au Metallic Multi-Layers on N-Alxga1−xn/gan Heterostructures

Fabrication of Ohmic Contact on the Carbon-Terminated Surface of N-Type Silicon Carbide

Al/Ti Contacts To Sb-Doped P-Type Zno

Ohmic Contact with a Contact Resistivity of 12 Ω ⋅ Mm on P-Gan/algan/gan

The Ohmic Contact of 4H-Sic Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing

Investigation of Chemically Vapour Deposited Tungsten and Tungsten Silicide As Contacts to N+ and P+ Silicon Areas

Formation of ohmic contacts on heavily Al + -implanted p-type SiC without alloying process

A method to improve the specific contact resistance of 4H-SiC Ohmic contact through increasing the ratio of sp 2 -carbon

Failure Mechanism of Ti/TiN/Pt Ohmic Contacts to N-Type 4H-Sic after High Temperature Annealing Treatment in Air

Novel Structural Ti/Al-Based Ohmic Contacts on Algan/Gan Heterostructures

Experimental Investigation of As Preamorphization Implant on Electrical Property of Ti-Based Silicide Contacts

Achieving Peta-Ohm Resistance for Semi-Insulating 4H-SiC Devices by Atomic Layer Deposition

Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiC