Abstract:Due to the excellent mechanical, chemical, and electrical properties of third-generation semiconductor silicon carbide (SiC), pressure sensors utilizing this material might be able to operate in extreme environments with temperatures exceeding 300 °C. However, the significant output drift at elevated temperatures challenges the precision and stability of measurements. Real-time in situ temperature monitoring of the pressure sensor chip is highly important for the accurate compensation of the pressure sensor. In this study, we fabricate platinum (Pt) thin-film resistance temperature detectors (RTDs) on a SiC substrate by incorporating aluminum oxide (Al2O3) as the transition layer and utilizing aluminum nitride (AlN) grooves for alignment through microfabrication techniques. The composite layers strongly adhere to the substrate at temperatures reaching 950 °C, and the interface of the Al2O3/Pt bilayer remains stable at elevated temperatures of approximately 950 °C. This stability contributes to the excellent high-temperature electrical performance of the Pt RTD, enabling it to endure temperatures exceeding 850 °C with good linearity. These characteristics establish a basis for the future integration of Pt RTD in SiC pressure sensors. Furthermore, tests and analyses are conducted on the interfacial diffusion, surface morphological, microstructural, and electrical properties of the Pt films at various annealing temperatures. It can be inferred that the tensile stress and self-diffusion of Pt films lead to the formation of hillocks, ultimately reducing the electrical performance of the Pt thin-film RTD. To increase the upper temperature threshold, steps should be taken to prevent the agglomeration of Pt films.

Failure Mechanism of Ti/TiN/Pt Ohmic Contacts to N-Type 4H-Sic after High Temperature Annealing Treatment in Air

Electrical Characteristics of Ti/Al/Ti/Au Multilayer Ohmic Contacts to N-Type GaN

Temperature Dependence of the Specific Resistance in Ti/Al/Ni/Au Ohmic Contacts on (nh4)2sx Treated N-Type GaN

The Thermal Stability Study and Improvement of 4H-Sic Ohmic Contact

Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC

Pt thin-film resistance thermo detectors with stable interfaces for potential integration in SiC high-temperature pressure sensors

A Study on the Deep Etching and Ohmic Contact Process of 6H-Sic High-Temperature Pressure Sensor

Fabrication of Ohmic Contact on the Carbon-Terminated Surface of N-Type Silicon Carbide

Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods

Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment

Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

High Temperature Induced Failure in Ti/Al/Ni/Au Ohmic Contacts on AlGaN/GaN Heterostructure

Thermal Stability of TiN/Ti/p+-Si0.3Ge0.7 Contact with Ultralow Contact Resistivity

Low Resistance Ti/Al/Ni/Au Ohmic Contact to (Nh4)(2)s-X Treated N-Type Gan for High Temperature Applications

Silicon on Insulator Pressure Sensor Based on A Thermostable Electrode for High Temperature Applications

High temperature pressure sensor using a thermostable electrode

Ti/NiCu/Ag and Al/NiCu/Ag Thin Film Deposited on Positive Temperature Coefficient (PTC) Thermistor by Direct Current Magnetron Sputtering

High-Temperature Failure Evolution Analysis of K-Type Film Thermocouples

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

Thermal Annealing Effects on Ni/Au Contacts to P Type Gan in Different Ambient

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon