Effects of RF magnetron sputtering power density on NTC characteristics of Mn–Co–Ni thin films
Guanhuan Lei,Hongwei Chen,Shanxue Zheng,Feizhi Lou,Linling Chen,Li Zeng,Jihua Zhang,Qiang Zhao,Chuanren Yang
DOI: https://doi.org/10.1007/s10854-012-0906-3
2012-01-01
Abstract:Thin film NTCR (negative temperature coefficient resistance), based on Mn–Co–Ni oxide, was prepared by reactive RF magnetron sputtering with various sputtering power density (0.95–3.82 W/cm 2 ). The crystalline structure and surface morphology of the NTC thin film were analyzed by XRD and AFM. The NTC characteristics, as a function of sputtering power density, were investigated. The values of B , α 25 and R 25 were in the range of 3,740–3,847 K, −4.328 to −4.207 %/K and 8.7–2,082.5 KΩ, respectively. With the increasing power density, the standard resistance ( R 25 ) decreased and the consistency of R 25 increased. Thin film NTCR with stable B value (3,740 K), low R 25 (10 4 Ω) and excellent consistency could be fabricated in mass production with about 3.82 W/cm 2 sputtering power density.