Abstract:Publication date: 22 August 2024 Source: Solid State Phenomena Vol. 359 Author(s): Mathieu Opprecht, Sébastien Kerdilès, Jérôme Biscarrat, Philippe Godignon, Cédric Masante, Romain Laviéville, Nicolas Vaxelaire, Patrice Gergaud, Adeline Grenier, Carl Jung, Fabien Roze, Zeinab Chehadi, Louis Thuries, Lu Lu, Toshiyuki Tabata Nowadays, the growing worldwide electrification requires new materials for power management. SiC currently dominates the market thanks to excellent energy efficiency and broad operating capabilities. The present paper proposes an experimental study of the Ni-SiC backside ohmic contact formation using 308 nm nanosecond laser annealing (NLA). After Nickel (80 nm) sputtering over 4H-SiC wafers, various laser conditions are investigated, with energy density (ED) ranging from 2.4 to 5.4 J/cm2, pulse number from 1 to 20 and chuck temperature from 25 °C (RT) to 400 °C. For all series, a common scenario is noticed as the ED increases, with first solid-state reactions, then local melt and, finally, complete top layer melt and de-wetting at high ED. An in-depth understanding of the impact of laser conditions on these stages is achieved, based on electrical data, Raman spectroscopy, optical microscopy, Scanning Electron Microscopy (SEM) and Scanning Transmission Electron Microscopy (STEM). Results reveal that both high pulse numbers and the use of a hot chuck enable to significantly reduce the ED needed to form low resistance contacts. In addition, sheet resistances and contact resistivities are linked to the microstructure evolution upon NLA exposure. As a proof-of-concept, an acceptable process point yields a contact resistivity around 5×10-5 Ω cm2 when the wafer is processed at 25 °C and a value as low as 10-5 Ω cm2 for 400 °C processing. The mechanisms involved and discussed in the present work may very likely pave the way for other contact formation with limited thermal budget.

Formation of ohmic contacts on heavily Al + -implanted p-type SiC without alloying process

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC

Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods

Fabrication of Ohmic Contact on the Carbon-Terminated Surface of N-Type Silicon Carbide

Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment

Searching for Device Processing Compatible Ohmic Contacts to Implanted P-Type 4H-Sic

Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Low Contact Resistivity of Ti/TiN/Al for NiSi2 on Epitaxial Si:P Structure at Full Low-Temperature Process below 450 °C

Low Ohmic Contact Resistivity Realized by in Situ SiNx Insertion for High Al-composition-AlGaN/GaN Heterostructure

Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing

Ohmic Contact and Interfacial Reaction of Ti/Al/Pt/Au Metallic Multi-Layers on N-Alxga1−xn/gan Heterostructures

I – V – T Studies on Ni-silicide/n-Si(100) Contacts Formed by Ti–Ni–Si Solid State Reaction

Formation of high-conductivity NiSi2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation

Formation of N-Type Crsi2 Semiconductor Layers on Si by High-Current Cr Ion Implantation

How to Accurately Determine the Ohmic Contact Properties on n-Type 4H-SiC

Photoelectrical characterization of heavily-doped p-SiC Schottky contacts

4H-SiC Ohmic Contact and Measure Technology

Study of Ni/Si(100) solid-state reaction with Al addition