Abstract:Journal of Applied Physics, Volume 131, Issue 18, May 2022. One of the major challenges of 4H-silicon carbide (4H-SiC) is that the preparation of low resistivity p-type 4H-SiC single crystals lags seriously behind that of low resistivity n-type 4H-SiC single crystals, hindering the development of important 4H-SiC power devices such as n-channel insulated gate bipolar transistors. In particular, the resistivity of p-type 4H-SiC single crystals prepared through the physical vapor transport technique can only be lowered to around 100 mΩ cm. One of the key causes is the incomplete ionization of the p-type dopant Al with an ionization energy ∼0.23 eV. Another factor is the compensating effect. It cannot simply assume nitrogen (N) is the sole compensatory center, since the number of the compensating center is larger than the concentration of N doping. In this work, we systematically investigate the compensation of native defects and self-compensation in Al-doped 4H-SiC. It is found that the positively charged carbon vacancies [math] are also the dominant compensating centers in Al-doped 4H-SiC. When the Al concentration is in the range of 1016–1019 cm−3, the concentration of holes is lower by one order of magnitude than the Al concentration because of the compensation of [math]. As the Al concentration exceeds 1020 cm−3, the concentration of holes is only in the order of magnitude of 1019 cm−3 owing to the dominant compensation of [math] and supplementary self-compensation of interstitial Al [math]. We propose that the passivation of [math] as well as quenching is effective to enhance the hole concentration of Al-doped 4H-SiC.

Photoelectrical characterization of heavily-doped p-SiC Schottky contacts

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

Characteristics of I(A-Si-H)/N+(Mc-Si-H) Junctions and Electron-Transport in P-Doped Mc-Si-H Films

Characterizations on the Doping of Single-Crystal Silicon Carbide

Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition

Investigation of electrical, dielectric and interface state densities of al/ p -Si structures with PTCDA interlayer under different light intensities

Formation of ohmic contacts on heavily Al + -implanted p-type SiC without alloying process

Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer

Thorough Wide-Temperature-Range Analysis of Pt/SiC and Cr/SiC Schottky Contact Non-Uniformity

The inhomogeneity of Co/p-poly-Si/sub 0.84/Ge/sub 0.16/ Schottky contact

4H–SiC photoconductive switching devices for use in high-power applications

The inhomogeneity of Co/p-poly-Si0.84Ge0.16 Schottky contact

Study of Interface State Density and Effective Oxide Charge in Post-Metallization Annealed SiO/sub 2/-Sic Structures

Compensation of p-type doping in Al-doped 4H-SiC

Schottky Contact Properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) Heterostructure

Variation of Schottky Barrier Height Induced by Dopant Segregation Monitored by Contact Resistivity Measurements

Double Threshold Behaviour of I-V Characteristics of Cosi2/Si Schottky Contacts

Study of the characteristics of an irradiated 4H-SiC charge particle detector