Abstract:The characterization of silicon carbide (SiC) by specific electrical atomic force microscopy (AFM) modes is highly appreciated for revealing its structure and properties at a nanoscale. However, during the conductive AFM (C-AFM) measurements, the strong electric field that builds up around and below the AFM conductive tip in ambient atmosphere may lead to a direct anodic oxidation of the SiC surface due to the formation of a water nanomeniscus. In this paper, the underlying effects of the anodization are experimentally investigated for SiC multilayers with different doping levels by studying gradual SiC epitaxial-doped layers with nitrogen (N) from 5 × 1017 to 1019 at/cm3. The presence of the water nanomeniscus is probed by the AFM and analyzed with the force-distance curve when a negative bias is applied to the AFM tip. From the water meniscus breakup distance measured without and with polarization, the water meniscus volume is increased by a factor of three under polarization. AFM experimental results are supported by electrostatic modeling to study oxide growth. By taking into account the presence of the water nanomeniscus, the surface oxide layer and the SiC doping level, a 2D-axisymmetric finite element model is developed to calculate the electric field distribution nearby the tip contact and the current distributions at the nanocontact. The results demonstrate that the anodization occurred for the conductive regime in which the current depends strongly to the doping; its threshold value is 7 × 1018 at/cm3 for anodization. Finally, the characterization of a classical planar SiC-MOSFET by C-AFM is examined. Results reveal the local oxidation mechanism of the SiC material at the surface of the MOSFET structure. AFM topographies after successive C-AFM measurements show that the local oxide created by anodization is located on both sides of the MOS channel; these areas are the locations of the highly n-type-doped zones. A selective wet chemical etching confirms that the oxide induced by local anodic oxidation is a SiOCH layer.

Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures.

Microscopic Observation of Lateral and Vertical Charge Transportation in Si Nanocrystals Sandwiched by Amorphous SiC Layers

Charging Effect in Silicon Nanocrystals Observed by Electrostatic and Kelvin-probe Force Microscopy

Nanoscale Quantification of Charge Injection and Transportation Process in Si-nanocrystal Based Sandwiched Structure.

Electronic Transport Properties of Silicon Carbide Molecular Junctions: First-Principles Study

Charge Storage in Si-nanocrystals Embedded NOS Structure Characterized by Kelvin Probe Force Microscopy

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

The Charge Storage of the Nc-Si Layer

Nanoscale Capacitance and Capacitance-Voltage Curves for Advanced Characterization of Electrical Properties of Si and GaN Structures Using Scanning Microwave Impedance Microscopy

Structural characterization and Coulomb blockade of a-SiN x / nanocrystalline Si /a-SiN x asymmetric double-barrier structures

Charge Transfer of Single Laser Crystallized Intrinsic and Phosphorus-Doped Si-nanocrystals Visualized by Kelvin Probe Force Microscopy

Formation and Charging Effect of Si Nanocrystals in A-Sinx/a-si/a-sinx Structures

Characterizations on the Doping of Single-Crystal Silicon Carbide

Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures

Charging and Coulomb Blockade Effects of the Nc-Si Embedded in SiNx Double-Barrier Structures

Different Charging Behaviors Between Electrons and Holes in Si Nanocrystals Embedded in SiN X Matrix by the Influence of Near-Interface Oxide Traps

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

SiC Doping Impact during Conducting AFM under Ambient Atmosphere

Surface Potential Modeling and Reconstruction in Kelvin Probe Force Microscopy

Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure