Abstract:Charge injection and transportation process is a fundamental problem to Si nanocrystals (Si-ncs) based electric and photonic devices. In the manuscript, a single layer of Si-ncs sandwiched by amorphous Si carbide (a-SiC) was prepared by excimer laser annealing of a-SiC/a-Si/a-SiC multilayers, and the charging effect was then characterized by Kelvin probe force microscopy (KPFM) on the microscopic scale. Opposite charges were injected into Si-ncs through the biased tip and formed a core-ring or up-down shaped distribution. The decay characteristics showed that these opposite charges would not only vertically tunnel through the bottom a-SiC layer to substrate but also laterally transport and recombine with each other driven by the attractive Coulomb force. Besides, the charge retention time was also found dependent on the injection biases, which is tentatively ascribed to the charge trapping by the Si-ncs/a-SiC interface states under high bias scanning. The analysis was further supported by conductive atomic force microscopy (CAFM) measurement, in which the current-voltage curves gradually shifted during the repetition test, probably because of bias screening by the trapped charges at these interface states.

Charge Storage in Si-nanocrystals Embedded NOS Structure Characterized by Kelvin Probe Force Microscopy

Charge storage in Si-nanocrystals embedded NOS structure characterized by Kelvin probe force microscopy

Microscopic Observation of Lateral and Vertical Charge Transportation in Si Nanocrystals Sandwiched by Amorphous SiC Layers

Charging Effect in Silicon Nanocrystals Observed by Electrostatic and Kelvin-probe Force Microscopy

Charge Transfer of Single Laser Crystallized Intrinsic and Phosphorus-Doped Si-nanocrystals Visualized by Kelvin Probe Force Microscopy

Double-level Charge Storage in Self-Aligned Doubly-Stacked Si Nanocrystals in SiN X Dielectric

The Charge Storage of the Nc-Si Layer

Nanoscale Quantification of Charge Injection and Transportation Process in Si-nanocrystal Based Sandwiched Structure.

Different Charging Behaviors Between Electrons and Holes in Si Nanocrystals Embedded in SiN X Matrix by the Influence of Near-Interface Oxide Traps

The Periodicity Effect on the Charge Storage Characteristic of Multistacked Nc-Si Floating Gate.

Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

Resonant Tunnelling and Storage of Electrons in Si Nanocrystals Within A-Sin X /Nc-Si/a-sin X Structures

Formation and Charging Effect of Si Nanocrystals in A-Sinx/a-si/a-sinx Structures

Electronic Properties and Charge Storage Effect of Amorphous SiN Passivated Nanocrystalline Silicon

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Large Storage Window in A-Sinx/Nc-Si/A-Sinx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures.

Large Storage Window in a-SiN <sub> <i>x</i> </sub> /nc-Si/a-SiN <sub> <i>x</i> </sub> Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures