Abstract:The surface-nitrided silicon nanocrystals (Si-NCs) floating gate nonvolatile memory (NVM) devices were fabricated by 0.13 mu m node CMOS technology. The surface-nitrided Si-NCs were formed in-situ by low-pressure chemical vapor deposition and followed by nitridation treatment in NH3 ambient. It is found that the nitridation treatment not only enhances the control effect of gate voltage on channel carriers by passivation of the Si-NCs surface defects but also suppresses releasing of the stored carriers among the neighboring Si-NCs and leakage from Si-NCs to channel through the tunneling oxide by a silicon nitride cover layer acted as potential barrier. Consequently, the storage carriers are fully discrete in the Si-NCs, which are different from that in the conventional poly-crystal Si or SONOS floating gate NVM devices. The surface-nitrided Si-NCs NVM devices show lower subthreshold swing value of 0.13V/decade, faster P/E speed characteristics of 1 mu s at +/- 7V, and good retention characteristics at room temperature. Furthermore, due to the improvement of the tunneling oxide quality by nitridation treatment, the stable memory window of 1.7V has been kept after 10(7) P/E cycles, showing superior endurance characteristics with the good retention characteristics. Our fabrication of surface-nitrided Si-NCs floating gate NVM is compatible with the standard CMOS technology, which may be employed in the 3-D NAND technology to further improve the device performance. (C) 2016 AIP Publishing LLC.

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Large Storage Window in A-Sinx/Nc-Si/A-Sinx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

Resonant Tunnelling and Storage of Electrons in Si Nanocrystals Within A-Sin X /Nc-Si/a-sin X Structures

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Electronic Properties and Charge Storage Effect of Amorphous SiN Passivated Nanocrystalline Silicon

The Development of Nanometer Solid State Storage Memory

The Charge Storage of the Nc-Si Layer

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

Double-level Charge Storage in Self-Aligned Doubly-Stacked Si Nanocrystals in SiN X Dielectric

Tunnelling and Storage of Charges in A-Sinx/Nc-Si/A-Sinx Structures

Formation and Charging Effect of Si Nanocrystals in A-Sinx/a-si/a-sinx Structures

Charge storage in Si-nanocrystals embedded NOS structure characterized by Kelvin probe force microscopy

Performance and Retention Characteristics of Nanocrystalline Si Floating Gate Memory with an Al2O3 Tunnel Layer Fabricated by Plasma-Enhanced Atomic Layer Deposition

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals

Enhanced Retention Characteristic Of Nisi2/Sinx Compound Nanocrystal Memory

Formation of NiSi2/SiNX compound nanocrystal for nonvolatile memory application

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Optimization of Silicon Nanocrystals Growth Process by Low Pressure Chemical Vapor Deposition for Non-Volatile Memory Application

The Periodicity Effect on the Charge Storage Characteristic of Multistacked Nc-Si Floating Gate.

Formation of NiSi2/SiN compound nanocrystal for nonvolatile memory application