Abstract:The surface-nitrided silicon nanocrystals (Si-NCs) floating gate nonvolatile memory (NVM) devices were fabricated by 0.13 mu m node CMOS technology. The surface-nitrided Si-NCs were formed in-situ by low-pressure chemical vapor deposition and followed by nitridation treatment in NH3 ambient. It is found that the nitridation treatment not only enhances the control effect of gate voltage on channel carriers by passivation of the Si-NCs surface defects but also suppresses releasing of the stored carriers among the neighboring Si-NCs and leakage from Si-NCs to channel through the tunneling oxide by a silicon nitride cover layer acted as potential barrier. Consequently, the storage carriers are fully discrete in the Si-NCs, which are different from that in the conventional poly-crystal Si or SONOS floating gate NVM devices. The surface-nitrided Si-NCs NVM devices show lower subthreshold swing value of 0.13V/decade, faster P/E speed characteristics of 1 mu s at +/- 7V, and good retention characteristics at room temperature. Furthermore, due to the improvement of the tunneling oxide quality by nitridation treatment, the stable memory window of 1.7V has been kept after 10(7) P/E cycles, showing superior endurance characteristics with the good retention characteristics. Our fabrication of surface-nitrided Si-NCs floating gate NVM is compatible with the standard CMOS technology, which may be employed in the 3-D NAND technology to further improve the device performance. (C) 2016 AIP Publishing LLC.

Formation of NiSi2/SiNX compound nanocrystal for nonvolatile memory application

Formation of NiSi2/SiN compound nanocrystal for nonvolatile memory application

Enhanced Retention Characteristic Of Nisi2/Sinx Compound Nanocrystal Memory

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

Formation of Cosi2/Cosixny Nanocrystals for Nonvolatile Memory Application

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals

The Role of Nitridation of Nc-Si Dots for Improving Performance of Nc-Si Nonvolatile Memory

Toward Long-Term Retention-Time Single-Electron-memory Devices Based on Nitrided Nanocrystalline Silicon Dots

Formation of High Density TiN Nanocrystals and Its Application in Non-Volatile Memories

Improvement of retention and endurance characteristics of Si nanocrystal nonvolatile memory device

Optimization of Silicon Nanocrystals Growth Process by Low Pressure Chemical Vapor Deposition for Non-Volatile Memory Application

The Development of Nanometer Solid State Storage Memory

Memory Characteristics of Ni-NiOx Core-Shell Nanocrystals Embedded in SiO2 Gate Oxide for Nonvolatile Flash Devices

Preparation of NiFe Binary Alloy Nanocrystals for Nonvolatile Memory Applications

Nonvolatile Memory Based on Ge/Si Hetero-Nanocrystals

Large Storage Window in A-Sinx/Nc-Si/A-Sinx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

Charge-Trapping Characteristics of Ga2o3 Nanocrystals for Nonvolatile Memory Applications

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Performance and Retention Characteristics of Nanocrystalline Si Floating Gate Memory with an Al2O3 Tunnel Layer Fabricated by Plasma-Enhanced Atomic Layer Deposition

Improved Memory Performance Of Metal-Oxide-Nitride-Oxide-Silicon By Annealing The Sio2 Tunnel Layer In Different Nitridation Atmospheres

Nonplanar NiSi Nanocrystal Floating-Gate Memory Based on a Triangular-Shaped Si Nanowire Array for Extending Nanocrystal Memory Scaling Limit