Abstract:The surface-nitrided silicon nanocrystals (Si-NCs) floating gate nonvolatile memory (NVM) devices were fabricated by 0.13 mu m node CMOS technology. The surface-nitrided Si-NCs were formed in-situ by low-pressure chemical vapor deposition and followed by nitridation treatment in NH3 ambient. It is found that the nitridation treatment not only enhances the control effect of gate voltage on channel carriers by passivation of the Si-NCs surface defects but also suppresses releasing of the stored carriers among the neighboring Si-NCs and leakage from Si-NCs to channel through the tunneling oxide by a silicon nitride cover layer acted as potential barrier. Consequently, the storage carriers are fully discrete in the Si-NCs, which are different from that in the conventional poly-crystal Si or SONOS floating gate NVM devices. The surface-nitrided Si-NCs NVM devices show lower subthreshold swing value of 0.13V/decade, faster P/E speed characteristics of 1 mu s at +/- 7V, and good retention characteristics at room temperature. Furthermore, due to the improvement of the tunneling oxide quality by nitridation treatment, the stable memory window of 1.7V has been kept after 10(7) P/E cycles, showing superior endurance characteristics with the good retention characteristics. Our fabrication of surface-nitrided Si-NCs floating gate NVM is compatible with the standard CMOS technology, which may be employed in the 3-D NAND technology to further improve the device performance. (C) 2016 AIP Publishing LLC.

The Role of Nitridation of Nc-Si Dots for Improving Performance of Nc-Si Nonvolatile Memory

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals

Formation of NiSi2/SiNX compound nanocrystal for nonvolatile memory application

Formation of NiSi2/SiN compound nanocrystal for nonvolatile memory application

Improvement of retention and endurance characteristics of Si nanocrystal nonvolatile memory device

Performance Improvement of Nc-Si Nonvolatile Memory by Novel Design of Tunnel and Control Layer

Toward Long-Term Retention-Time Single-Electron-memory Devices Based on Nitrided Nanocrystalline Silicon Dots

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

Charge Storage in Nitrided Nanocrystalline Silicon Dots

The Development of Nanometer Solid State Storage Memory

Performance and Retention Characteristics of Nanocrystalline Si Floating Gate Memory with an Al2O3 Tunnel Layer Fabricated by Plasma-Enhanced Atomic Layer Deposition

Optimization of Silicon Nanocrystals Growth Process by Low Pressure Chemical Vapor Deposition for Non-Volatile Memory Application

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Performance Improvements of Metal–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with ZrO2Charge-Trapping Layer by Using Nitrogen Incorporation

Improved Memory Performance Of Metal-Oxide-Nitride-Oxide-Silicon By Annealing The Sio2 Tunnel Layer In Different Nitridation Atmospheres

Improved Memory Characteristics by NH3-nitrided GdO As Charge Storage Layer for Nonvolatile Memory Applications

Improved performance of Si-NC memory using a novel two-step program scheme

Enhanced Retention Characteristic Of Nisi2/Sinx Compound Nanocrystal Memory

Charge-Trapping Characteristics of Ga2o3 Nanocrystals for Nonvolatile Memory Applications

Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or -Grown Oxynitride as Tunnel Layer

Performance and reliability feature of nanocrystal memory devices