Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Toward Long-Term Retention-Time Single-Electron-memory Devices Based on Nitrided Nanocrystalline Silicon Dots

Charge Storage in Nitrided Nanocrystalline Silicon Dots

Formation of NiSi2/SiNX compound nanocrystal for nonvolatile memory application

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

Formation of NiSi2/SiN compound nanocrystal for nonvolatile memory application

Enhanced Retention Characteristic Of Nisi2/Sinx Compound Nanocrystal Memory

The Role of Nitridation of Nc-Si Dots for Improving Performance of Nc-Si Nonvolatile Memory

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals

Operation of Nanocrystalline-Silicon-based Few-Electron Memory Devices in the Light of Electron Storage, Ejection, and Lifetime Characteristics

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

The Development of Nanometer Solid State Storage Memory

Improvement of retention and endurance characteristics of Si nanocrystal nonvolatile memory device

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Large Storage Window in A-Sinx/Nc-Si/A-Sinx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Evidence of Electron Trapping and Emission in Nanocrystalline-Si Based Memory Device

Performance and Retention Characteristics of Nanocrystalline Si Floating Gate Memory with an Al2O3 Tunnel Layer Fabricated by Plasma-Enhanced Atomic Layer Deposition

Memory Effect in Silicon Nitride in Silicon Devices

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Optimization of Silicon Nanocrystals Growth Process by Low Pressure Chemical Vapor Deposition for Non-Volatile Memory Application

Nonplanar NiSi Nanocrystal Floating-Gate Memory Based on a Triangular-Shaped Si Nanowire Array for Extending Nanocrystal Memory Scaling Limit